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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1817
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1817 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0±0.05
0.25
FEATURES
•
2.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 12 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−6.0
A)
R
DS(on)2
= 12.5 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−6.0
A)
R
DS(on)3
= 19.2 mΩ MAX. (V
GS
=
−2.5
V, I
D
=
−6.0
A)
•
Built-in G-S protection diode against ESD
3°
+5°
–3°
0.1±0.05
1
4
0.5
0.6
+0.15
–0.1
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power TSSOP8
0.65
0.27
+0.03
–0.08
0.8 MAX.
µ
PA1817GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−20
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Drain
m
12
m
12
m
48
2.0
150
−55
to +150
Gate
Gate
Protection
Diode
Body
Diode
Total Power Dissipation
Channel Temperature
Storage Temperature
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16253EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2002
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