DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2721GR
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The
µ
PA2721GR is N-channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
FEATURES
•
Low on-state resistance
R
DS(on)1
= 4.3 mΩ MAX. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 6.3 mΩ MAX. (V
GS
= 4.5 V, I
D
= 10 A)
•
Low C
iss
: C
iss
= 5100 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Built-in gate protection diode
•
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
Note
0.12 M
µ
PA2721GR-E1
µ
PA2721GR-E1-A
µ
PA2721GR-E2
µ
PA2721GR-E2-A
Power SOP8
Power SOP8
Power SOP8
EQUIVALENT CIRCUIT
Drain
Note
Note
Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
GSS
±20
Gate to Source Voltage (V
DS
= 0 V)
±19
Drain Current (DC)
I
D(DC)
Note1
Drain Current (pulse)
±150
I
D(pulse)
Note2
Total Power Dissipation
1.1
P
T1
Note2
Total Power Dissipation (PW = 10 sec)
P
T2
2.5
150
Channel Temperature
T
ch
–55 to +150
Storage Temperature
T
stg
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
V
V
A
A
W
W
°C
°C
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17444EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
µ
PA2721GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 10 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
1
UNIT
µ
A
µ
A
V
S
±
10
1.0
12
3.4
4.6
5100
1050
690
23
40
113
51
4.3
6.3
2.5
Drain to Source On-state Resistance
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 15 V
V
GS
= 5 V
I
D
= 19 A
I
F
= 19 A, V
GS
= 0 V
I
F
= 19 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
51
13
24
0.8
48
52
Note
Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
D.U.T.
V
GS
0
10%
I
G
= 2 mA
V
GS
90%
R
L
V
DD
V
DD
PG.
90%
90%
10%
10%
50
Ω
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G17444EJ1V0DS
µ
PA2721GR
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
dT - Percentage of Rated Power - %
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
100
I
D
- Drain Current - A
100
I
D(DC)
10
PW
1
m
s
=
m
s
10
0
s
µ
80
60
40
20
0
10
1
0.1
d
ite )
m V
Li 10
)
on
=
S(
S
R
D
t V
G
a
(
Po
10
0m
s
we
rD
s
iss
ip
at
io
n
10
T
A
= 25°C
Single pulse
Mounted on glass epoxy board
of 1 inch x 1 inch x 0.8 mm
Li
m
ite
d
0
20
40
60
80
100
120 140 160
T
A
- Ambient Temperature -
˚C
0.01
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
1000
R
th(ch-A)
= 114°C/W
100
10
1
0.1
T
A
= 25°C
Single pulse
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
0.01
100
µ
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
80
70
I
D
- Drain Current - A
100
60
50
40
30
20
10
0
0
4.5 V
I
D
- Drain Current - A
V
GS
= 10 V
10
T
ch
=
−
55°C
25°C
75°C
150°C
1
0.1
V
DS
= 10 V
Pulsed
0.01
Pulsed
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
Data Sheet G17444EJ1V0DS
V
GS
- Gate to Source Voltage - V
3
µ
PA2721GR
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
V
GS(off)
- Gate Cut-off Voltage - V
100
2
10
T
ch
=
−
55°C
25°C
75°C
150°C
V
DS
= 10 V
Pulsed
1
V
DS
= 10 V
Pulsed
0
-50
0
50
100
150
1
0.1
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
Pulsed
15
I
D
= 10 A
Pulsed
10
10
5
V
GS
= 4.5 V
5
10 V
0
0.1
1
10
100
I
D
- Drain Current - A
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
8
6
V
GS
= 4.5 V
4
2
0
-50
10 V
I
D
= 10 A
Pulsed
0
50
100
150
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
C
iss
C
oss
C
rss
100
V
GS
= 0 V
f = 1 MHz
10
0.1
1
10
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
Data Sheet G17444EJ1V0DS
1000
4
µ
PA2721GR
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
30
V
DD
= 24 V
15 V
6V
6
5
4
3
2
V
DS
1
0
0
10
20
30
40
50
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
t
d(of f )
100
t
r
t
f
20
10
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
0.1
1
10
t
d( on)
V
GS
10
1
0
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
1000
10
V
GS
= 10 V
0V
100
1
10
di/dt = 100 A/
µ
s
V
GS
= 0 V
1
0.1
1
10
100
0.1
Pulsed
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet G17444EJ1V0DS
5
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