Datasheet> 器件分类 > 分立半导体> 晶体管> UPA2725UT1A-E1-AZ

UPA2725UT1A-E1-AZ: 产品描述Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8; 产品类别分立半导体晶体管; 文件大小177KB，共2页; 制造商NEC(日电); 标准

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UPA2725UT1A-E1-AZ概述

Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8

UPA2725UT1A-E1-AZ规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	LEAD FREE, HVSON-8
Reach Compliance Code	compliant
其他特性	TAPE AND REEL
配置	SINGLE
最小漏源击穿电压	30 V
最大漏极电流 (ID)	25 A
最大漏源导通电阻	0.0075 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-F5
JESD-609代码	e6
元件数量	1
端子数量	5
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL AND P-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN BISMUTH
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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N- and P-Channel MOSFETs

Power MOSFETs for DC/DC

Conversion and Li-ion Battery Protection

μPA272xUT1A and μPA273xUT1A Series

Defeating heat with a small package, these two series of power

MOSFETs from NEC Electronics America handle DC/DC conversion

and battery protection tasks. The devices’ low R

DS(ON)

minimizes

power dissipation, and an HVSON package trims device thickness to

just 1 millimeter (mm). This package enables part of the device’s lead frame to connect directly

to the circuit board for efficient heat dissipation. Both series of devices are 4.5V gate-driven types,

and both are particularly well suited for notebook PCs.

The μPA272xUT1A Series consists of N-channel MOSFETs that provide high-speed switching

performance to handle synchronous rectifier applications for DC/DC converters. R

DS(ON)

is as

low as 2.5 mΩ max at a V

of 10V (I

= 17A). All of these devices have a V

DSS

of 30V.

Designed to provide protection for battery applications, the μPA273xUT1A Series prevents heat

generation and explosions that may result from lithium-ion-battery over-current. This series

consists of P-channel MOSFETs that have a V

DSS

of –30V. R

DS(ON)

for these devices is down to

2.6 mΩ max at a V

of –10V (I

= 22A).

Key Features

Extremely low on-state resistance

Thin, high-power HVSON

package

4.5V gate-driven configuration

Applications

Synchronous rectifiers in DC/DC

converters

Notebook computers

Servers

HVSON Package

1.0mm max.

5.15mm max.

6.0mm max.

μPA272xUT1A Series

Applications

Low Side in Notebook PCs

DC/DC Converters

NEC Electronics

Part Number

µPA2722UT1A

µPA2723UT1A

µPA2724UT1A

µPA2725UT1A

µPA2726UT1A

µPA2727UT1A

DDS

(V)

(DC)

(A)

±29

±33

±29

±25

±20

±16

DS(ON)

Typ/max

(mohm)

@ 10V

2.6/3.3

2.0/2.5

2.7/3.3

3.8/5.0

5.7/7.0

7.7/9.6

@ 4.5V

3.4/4.6

3.6/3.5

3.5/5.0

5.2/7.5

7.7/11

10/15

ISS

(pF)

6200

8610

4610

2800

1920

1260

RSS

(pF)

540

700

430

260

170

110

(nC)

= 5V

(nC)

7.5

5.2

3.3

www.am.necel.com/powermanagement

UPA2725UT1A-E1-AZ相似产品对比

	UPA2725UT1A-E1-AZ	UPA2726UT1A-E1-AZ	UPA2723UT1A	UPA2727UT1A-E1-AZ	UPA2731UT1A	UPA2722UT1A-E1-AZ	UPA2732UT1A	UPA2724UT1A-E1-AZ
描述	Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8	Power Field-Effect Transistor, 20A I(D), 30V, 0.011ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HVSON-8	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8	Power Field-Effect Transistor, 20A I(D), 30V, 0.0064ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HVSON-8	Power Field-Effect Transistor, 29A I(D), 30V, 0.0046ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8	Power Field-Effect Transistor, 20A I(D), 30V, 0.0067ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HVSON-8	Power Field-Effect Transistor, 29A I(D), 30V, 0.005ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8
是否Rohs认证	符合	符合	不符合	符合	不符合	符合	不符合	符合
包装说明	LEAD FREE, HVSON-8	LEAD FREE, HVSON-8	HVSON-8	LEAD FREE, HVSON-8	HVSON-8	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F8	LEAD FREE, HVSON-8
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V
最大漏极电流 (ID)	25 A	20 A	33 A	16 A	20 A	29 A	20 A	29 A
最大漏源导通电阻	0.0075 Ω	0.011 Ω	0.0035 Ω	0.015 Ω	0.0064 Ω	0.0046 Ω	0.0067 Ω	0.005 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-F5	R-PDSO-F5	R-PDSO-F8	R-PDSO-F5	R-PDSO-F8	R-PDSO-F5	R-PDSO-F8	R-PDSO-F5
JESD-609代码	e6	e6	e0	e6	e0	e6	e0	e6
元件数量	1	1	1	1	1	1	1	1
端子数量	5	5	8	5	8	5	8	5
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子面层	TIN BISMUTH	TIN BISMUTH	TIN LEAD	TIN BISMUTH	TIN LEAD	TIN BISMUTH	TIN LEAD	TIN BISMUTH
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
其他特性	TAPE AND REEL	TAPE AND REEL	-	TAPE AND REEL	-	TAPE AND REEL	-	TAPE AND REEL
厂商名称	-	-	-	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)

UPA2725UT1A-E1-AZ

UPA2725UT1A-E1-AZ概述

UPA2725UT1A-E1-AZ规格参数

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