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1.
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“Standard”:
2.
3.
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6.
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8.
9.
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12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON + SiGe RF TWIN TRANSISTOR
µ
PA867TS
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG)
FEATURES
• 2 different built-in transistors (2SC5435, NESG2107M33)
Q1: High gain transistor
f
T
= 12.0 GHz TYP.,
S
21e
2
= 11 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Q2: Built-in low phase noise SiGe transistor suited for OSC applications
f
T
= 10.0 GHz TYP.,
S
21e
2
= 9.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• 6-pin super lead-less minimold package (1007 PKG)
BUILT-IN TRANSISTORS
Q1
Flat-lead 3-pin thin-type ultra super minimold part No.
3-pin super lead-less minimold part No.
2SC5435
−
Q2
−
NESG2107M33
ORDERING INFORMATION
Part Number
Order Number
Package
6-pin super lead-less
minimold package
(1007 PKG) (Pb-Free)
Note
Quantity
50 pcs
(Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the
perforation side of the tape
µ
PA867TS
µ
PA867TS-T3
µ
PA867TS-A
µ
PA867TS-T3-A
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10423EJ02V0DS (2nd edition)
Date Published September 2005 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2005
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