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UPA867TS-A

产品描述RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6
产品类别分立半导体    晶体管   
文件大小58KB,共6页
制造商NEC(日电)
标准  
下载文档 详细参数 选型对比 全文预览

UPA867TS-A概述

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6

UPA867TS-A规格参数

参数名称属性值
是否Rohs认证符合
包装说明LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6
Reach Compliance Codecompliant
最大集电极电流 (IC)0.03 A
基于收集器的最大容量0.7 pF
集电极-发射极最大电压6 V
配置SEPARATE, 2 ELEMENTS
最高频带S BAND
JESD-30 代码R-PDSO-F6
JESD-609代码e6
湿度敏感等级1
元件数量2
端子数量6
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子面层TIN BISMUTH
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间10
晶体管元件材料SILICON GERMANIUM
标称过渡频率 (fT)12000 MHz
Base Number Matches1

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DATA SHEET
NPN SILICON + SiGe RF TWIN TRANSISTOR
µ
PA867TS
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG)
FEATURES
• 2 different built-in transistors (2SC5435, NESG2107M33)
Q1: High gain transistor
f
T
= 12.0 GHz TYP.,
S
21e
2
= 11 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Q2: Built-in low phase noise SiGe transistor suited for OSC applications
f
T
= 10.0 GHz TYP.,
S
21e
2
= 9.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• 6-pin super lead-less minimold package (1007 PKG)
BUILT-IN TRANSISTORS
Q1
Flat-lead 3-pin thin-type ultra super minimold part No.
3-pin super lead-less minimold part No.
2SC5435
Q2
NESG2107M33
ORDERING INFORMATION
Part Number
Order Number
Package
6-pin super lead-less
minimold package
(1007 PKG) (Pb-Free)
Note
Quantity
50 pcs
(Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the
perforation side of the tape
µ
PA867TS
µ
PA867TS-T3
µ
PA867TS-A
µ
PA867TS-T3-A
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10423EJ02V0DS (2nd edition)
Date Published September 2005 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2005

UPA867TS-A相似产品对比

UPA867TS-A UPA867TS-T3FB-A UPA867TS-T3-A UPA867TS-FB-A
描述 RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEAD FREE, SUPER LEADLESS MINIMOLD, 1007, 6 PIN RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEAD FREE, SUPER LEADLESS MINIMOLD, 1007, 6 PIN
包装说明 LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6 LEAD FREE, SUPER LEADLESS MINIMOLD, 1007, 6 PIN LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6 LEAD FREE, SUPER LEADLESS MINIMOLD, 1007, 6 PIN
Reach Compliance Code compliant unknown compliant unknown
最大集电极电流 (IC) 0.03 A 0.1 A 0.03 A 0.1 A
基于收集器的最大容量 0.7 pF 0.7 pF 0.7 pF 0.7 pF
集电极-发射极最大电压 6 V 5 V 6 V 5 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最高频带 S BAND L BAND S BAND L BAND
JESD-30 代码 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
元件数量 2 2 2 2
端子数量 6 6 6 6
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL
晶体管元件材料 SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM
标称过渡频率 (fT) 12000 MHz 17000 MHz 12000 MHz 17000 MHz
Base Number Matches 1 1 1 -

 
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