DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA892TC
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Ideal for 3.6 to 4.2 GHz oscillation application
• 21.0 GHz f
T
high-gain transistor
f
T
= 21.0 GHz TYP.,
S
21e
2
= 11.5 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
• Built-in 2 transistors (2
×
2SC5668)
• Flat-lead 6-pin thin-type ultra super minimold package
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5668
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
µ
PA892TC
µ
PA892TC-T1
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15282EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
©
2001
µ
PA892TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
15
3.3
1.5
35
115 in 1 element
230 in 2 elements
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
MIN.
−
−
50
18.0
9.0
8.5
−
−
–
–
TYP.
−
−
70
21.0
11.5
11.0
1.1
0.24
12.5
13.5
MAX.
100
100
100
−
−
−
1.5
0.3
–
–
Unit
nA
nA
−
GHz
dB
dB
dB
pF
dB
dB
f
T
S
21e
S
21e
NF
C
re
Note 2
2
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
2
MAG
MSG
Note 3
Note 4
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3.
MAG =
4.
MSG =
S
21
(K –
√
(K
2
– 1) )
S
12
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
4C
50 to 100
2
Data Sheet P15282EJ1V0DS
µ
PA892TC
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
230
200
150
115
100
50
Per Element
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
2 Elements in total
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
35
V
CE
= 2 V
30
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
500
µ
A
450
µ
A
400
µ
A
350
µ
A
300
µ
A
250
µ
A
200
µ
A
10
150
µ
A
100
µ
A
I
B
= 50
µ
A
0
1
2
3
4
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
30
20
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 2 V
DC Current Gain h
FE
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Data Sheet P15282EJ1V0DS
3
µ
PA892TC
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
25
Gain Bandwidth Product f
T
(GHz)
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
25
f = 2 GHz
V
CE
= 2 V
20
f = 2 GHz
V
CE
= 1 V
20
15
15
10
10
5
0
1
5
0
1
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN vs. FREQUENCY
30
Insertion Power Gain |S
21e
|
2
(dB)
Insertion Power Gain |S
21e
|
2
(dB)
INSERTION POWER GAIN vs. FREQUENCY
30
V
CE
= 2 V
I
C
= 20 mA
25
20
15
10
5
0
0.1
V
CE
= 1 V
I
C
= 10 mA
25
20
15
10
5
0
0.1
1
Frequency f (GHz)
10
1
Frequency f (GHz)
10
4
Data Sheet P15282EJ1V0DS
µ
PA892TC
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
V
CE
= 2 V
f = 1 GHz
20
|S
21e
|
2
15
MSG
25
V
CE
= 1 V
f = 1 GHz
20
MSG
MAG
15
|S
21e
|
2
10
10
5
0
5
0
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
V
CE
= 1 V
f = 2 GHz
20
MSG
MAG
25
V
CE
= 2 V
f = 2 GHz
20
MSG
MAG
|S
21e
|
2
10
15
15
10
|S
21e
|
2
5
0
5
0
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Data Sheet P15282EJ1V0DS
5
DigiKey得捷技术专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
