(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
I
O
5.0
I
FRM
5.6
I
FSM
80
T
stg
T
J
−65 to +175
−65 to +175
°C
°C
A
A
Value
100
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Tab (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. 1 inch square pad size (1
×
0.5 inch) for each lead on FR4 board.
Symbol
y
JCT
R
qJA
Value
3.3
50.2
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(i
F
= 5 Amps, T
J
= 25°C)
(i
F
= 5 Amps, T
J
= 125°C)
Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Diode Capacitance
(Rated dc Voltage, T
J
= 25°C, f = 1 MHz)
i
R
1.50
1.29
C
d
26.5
50
7.5
Symbol
v
F
0.95
0.70
1.00
0.80
mA
mA
pF
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
NRVTS5100ETFS
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
10
T
A
= 150°C
T
A
= 125°C
1
T
A
= 85°C
T
A
= 25°C
T
A
= −55°C
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
A
= 175°C
10
T
A
= 150°C
T
A
= 125°C
1
T
A
= 85°C
T
A
= 25°C
0.1
0.1
0.3
T
A
= −55°C
0.5
0.7
0.9
1.1
1.3
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−01
1.E−02
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= −55°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= −55°C
1.E−01
1.E−02
1.E−03
1.E−04
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
10
20
30
40
50
60
70
80
90
100
1.E−08
1.E−09
20
30
40
1.E−10
10
1.E−10
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
50
60
70
80
90
100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
10
Figure 4. Maximum Reverse Characteristics
R
qJC
= 3.3°C/W
8
DC
100
6
Square Wave
4
10
2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (°C)
1
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode
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3
NRVTS5100ETFS
TYPICAL CHARACTERISTICS
7
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
6
5
4
3
Square Wave
2
1
0
0
1
2
3
4
5
6
7
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
I
PK
/I
AV
= 20
DC
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
Figure 7. Forward Power Dissipation
100
50% Duty Cycle
10
R
qJA
(°C/W)
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
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4
NRVTS5100ETFS
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
0.20 C
D
D1
8 7 6 5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
2X
A
B
2X
0.20 C
E1 E
4X
q
1 2 3 4
c
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
8X
b
C A B
6X
C
SEATING
PLANE
e
DETAIL A
DETAIL A
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0
_
−−−
12
_
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0
_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12
_
0.10
0.05
C
4X
SOLDERING FOOTPRINT*
e/2
1
4
8X
L
0.42
K
PACKAGE
OUTLINE
0.65
PITCH
4X
0.66
E2
E3
8
5
M
D2
BOTTOM VIEW
L1
0.75
0.57
3.60
2.30
G
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
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