CM5943
NPN SILICON
HIGH FREQUENCY TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CM5943 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package,
designed for high frequency amplifier and non-saturated switching applications. This device is a replacement for the
2N5943.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ
JA
Thermal Resistance
Θ
JC
UNITS
V
V
V
mA
W
W
°C
°C/W
°C/W
40
30
3.5
400
1.0
3.5
-65 to +200
175
50
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICEO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
fT
fT
fT
Ccb
Ceb
hfe
rb’Cc
NF
NF
TEST CONDITIONS
VCB=15V
VCE=20V
IC=100µA
IC=5.0mA
IE=100µA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=15V, IC=50mA
VCE=15V, IC=25mA, f=200MHz
VCE=15V, IC=50mA, f=200MHz
VCE=15V, IC=100mA, f=200MHz
VCB=30V, IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
VCE=15V, IC=50mA, f=1.0kHz
VCB=15V, IE=50mA, f=31.8MHz
VCE=15V, IC=30mA, f=200MHz (Figure 1)
VCE=15V, IC=35mA, f=200MHz (Figure 2)
VCE=15V, IC=10mA, f=200MHz (Figure 1)
VCE=15V, IC=50mA, f=250MHz (Figure 2)
MIN
TYP
MAX
10
50
UNITS
µA
µA
V
V
V
V
V
MHz
MHz
MHz
pF
pF
ps
dB
dB
dB
dB
40
30
3.5
0.2
1.0
300
2400
2.5
15
350
20
3.4
8.0
11.4
7.0
25
1000
1200
1000
1.0
25
2.0
Gpe
Gpe
(SEE REVERSE SIDE)
R0 (1 – October 2001)
CM5943
HIGH FREQUENCY TRANSISTOR
Vc
C9
L4
C3
C11
L2
C1
C12
C13
C10
L3
C3
C5
T1
C6
L5
R1
C14
75 Ohms
INPUT
L1
75 Ohms
OUTPUT
50 Ohms
INPUT
50 Ohms
OUTPUT
C1
L2
R2
C4
L4
C4
C2
L1
C5
L3
C6
R3
C1: 470 pF
C7
C8
C2: 3.0 - 35 pF
C3, C12: 1.0 - 10 pF
C4, C11: 500 pF
C5, C7, C9, C13: 0.1 µF
V
E
C6, C8, C10, C14: 0.001 µF
L1: 2 turns #20 wire, 1/4" ID, 3/16" long
L2: 5 turns #18 wire, 1/4" ID, 5/8" long, tapped 1-3/4 turns from collector
L3, L4: 0.47 µH
C2
C1: 1.0 - 10 pF Johanson 2951 or equivalent
C2, C7: 0.01 µF
C3: 0.5 - 6.0 pF Johanson 4642 or equivalent
V
EE
C4, C6: 1500 pF
C5: 470 pF
L1: 2 turns AWG #26, 5/32" ID
L2: 1µH molded choke
L3: 5 turns AWG #26, 3/32" ID
L4: ferrite, 3 turns #30 on stackpole 57-0156 bead
L5: 2 turns AWG #26, 3/32" ID
T1: AWG #30 trifilar wound 1-9-9 on stackpole 57-0985, #11 toroid
R1: 270 ohms
R2: 18 ohms
R3: 150 ohms
C7
V
CC
Figure 1.
Narrow-Band Test Circuit
Figure 2.
Broad-Band Test Circuit
TO-39 PACKAGE - MECHANICAL OUTLINE
A
B
D
C
E
F
G
H
LEAD #3
LEAD #2
LEAD #1
SYMBOL
A (DIA)
B (DIA)
C
D
E
F (DIA)
G (DIA)
H
I
J
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.335 0.370
8.51
9.40
0.315 0.335
8.00
8.51
-
0.040
-
1.02
0.240 0.260
6.10
6.60
0.500
-
12.70
-
0.016 0.021
0.41
0.53
0.200
5.08
0.100
2.54
0.028 0.034
0.71
0.86
0.029 0.045
0.74
1.14
TO-39 (REV: R1)
45°
J
I
R1
LEAD CODE:
1) Emitter
2) Base
3) Collector
R0 (1- October 2001)
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