LESHAN RADIO COMPANY, LTD.
High-speed Diode
DESCRIPTION
The LBAS516T1 is a high-speed switching diode fabricated in planar technology
and encapsulated in the SOD523(SC79) SMD plastic package.
FEATURES
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 85 V
· Repetitive peak forward current: max. 500 mA.
· We declare that the material of product compliance with RoHS requirements.
· S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
CATHODE
2
ANODE
SOD-523
LBAS516T1G
S-LBAS516T1G
1
2
APPLICATIONS
· High-speed switching in e.g. surface mounted circuits.
ORDERING INFORMATION
Device
LBAS516T1G
S-LBAS516T1G
LBAS516T3G
S-LBAS516T3G
6
10000 Tape & Reel
Marking
6
Shipping
3000 Tape & Reel
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2 I
F
= 1 mA
I
F
= 10 mA
I
F
=50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.4 V
R
= 25 V
V
R
=75 V
V
R
= 25 V; T
j
= 150 °C
V
R
= 75 V; T
j
= 150 °C;
C
d
t
rr
V
fr
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0; see Fig.5
when switched from I
F
=10mA to I
R
= 10mA;
R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.6
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
MAX.
715
855
1
1.25
30
1
30
50
1
4
1.75
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R
Note
th j-s
CONDITIONS
note 1
VALUE
120
UNIT
K/W
thermal resistance from junction to soldering point
1. Soldering point of the cathode tab.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LBAS516T1G,S-LBAS516T1G
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
T
s
=90°C; note 1; see Fig.1
square wave; T
j
=25°C prior to
surge; see Fig.3
t =1µs
t =1 ms
t =1 s
P
tot
T
stg
T
j
Note
1. Ts is the temperature at the soldering point of the cathode tab.
total power dissipation
storage temperature
junction temperature
T
s
=90°C; note 1
CONDITIONS
MIN.
–
–
–
–
MAX.
85
75
250
500
UNIT
V
V
mA
mA
–
–
–
–
-65
–
4
1
0.5
500
+150
150
A
A
A
mW
°C
°C
500
300
400
200
I
F
(mA)
200
100
100
(1) T
j
= 150 °C; typical values.
(2)T
j
=25°C; typical values.
(3) T
j
=25°C; maximum values.
0
50
100
150
200
0
0
1
2
0
T
S
(
°C
)
I
F
(mA)
300
Fig.1 Maximum permissible continuous forward current as a
function of soldering point temperature.
10
2
V
F
( V )
Fig.2 Forward current as a function of
forward voltage.
10
I
FSM
(A)
1
Based on square wave currents;
T
j
=25°C prior to surge.
10
-1
0
10
10
2
10
3
10
4
t
P
(
µs
)
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LBAS516T1G,S-LBAS516T1G
10
5
0.6
10
4
I
R
(nA)
0.4
10
3
C
d
(pF)
0.2
10
2
f = 1 MHz ; T
j
=25°C;
10
0
100
200
0
0
4
8
12
16
T
J
( °C )
Fig.4 Reverse current as a function of junction
temperature.
V
R
( V )
Fig.5 Diode capacitance as a function of
reverse voltage; typical values.
(1) I
R
= 1 mA.
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty factor
δ
= 0.05;
Oscilloscope: rise time t
r
= 0.35 ns.
Fig.6 Reverse recovery voltage test circuit and waveforms.
Input signal: forward pulse rise time
t
r
= 20 ns; forward current pulse duration
t
p
≥
100 ns; duty factor
δ ≤
0.005.
Fig.7 Forward recovery voltage test circuit and waveforms.
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LBAS516T1G,S-LBAS516T1G
SOD−523
−X−
D
−Y−
E
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
b
0.08
1
M
2
X Y
TOP VIEW
A
c
H
E
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
0.48
2X
1.80
0.40
2X
PACKAGE
OUTLINE
DIMENSION: MILLIMETERS
Rev.O 4/4
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
