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SGP13N60UFD
IGBT
SGP13N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 6.5A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 37ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GCE
TO-220
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGP13N60UFD
600
±
20
13
6.5
52
8
56
60
25
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
2.0
3.5
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGP13N60UFD Rev. A1
SGP13N60UFD
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff.icient of Break-
down Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 6.5mA, V
CE
= V
GE
I
C
= 6.5A
,
V
GE
= 15V
I
C
= 13A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
375
63
13
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
20
27
70
97
85
95
180
30
32
85
168
180
165
345
25
7
8
7.5
--
--
130
150
--
--
270
--
--
200
250
--
--
500
35
12
14
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 6.5A,
R
G
= 50Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 6.5A,
R
G
= 50Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 6.5A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
I
F
= 8A
Test Conditions
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
37
55
3.5
4.5
65
124
Max.
1.7
--
55
--
5.0
--
138
--
Units
V
ns
A
nC
I
F
= 8A,
di/dt = 200A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
©2002 Fairchild Semiconductor Corporation
SGP13N60UFD Rev. A1
SGP13N60UFD
60
Common Emitter
T
C
= 25℃
50
20V
30
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
25
Collector Current, I
C
[A]
40
15V
Collector Current, I
C
[A]
8
20
30
12V
20
V
GE
= 10V
10
15
10
5
0
0
2
4
6
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
12
Common Emitter
V
GE
= 15V
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V
CE
[V]
3
13A
9
6.5A
2
I
C
= 3A
1
Load Current [A]
6
3
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 14W
0.1
1
10
100
1000
0
0
30
60
90
120
150
0
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V [V]
CE
16
12
12
8
8
4
I
C
= 3A
0
0
4
8
13A
6.5A
13A
4
I
C
= 3A
0
6.5A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGP13N60UFD Rev. A1
SGP13N60UFD
600
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cies
300
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 6.5A
T
C
= 25℃
T
C
= 125℃
500
Capacitance [pF]
Ton
Switching Time [ns]
400
100
300
Coes
200
Tr
100
Cres
0
1
10
30
10
1
10
100
400
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 6.5A
T
C
= 25℃
T
C
= 125℃
600
Eon
Toff
Switching Loss [uJ]
Toff
Eoff
Eon
100
Eoff
Tf
100
Tf
50
1
10
100
300
10
1
10
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 6.5A
T
C
= 25℃
T
C
= 125℃
100
400
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 50
Ω
T
C
= 25℃
T
C
= 125℃
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 50
Ω
T
C
= 25℃
T
C
= 125℃
100
Switching Time [ns]
Switching Time [ns]
Toff
Toff
Tf
100
Tf
Ton
Tr
10
0
2
4
6
8
10
12
14
50
0
2
4
6
8
10
12
14
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP13N60UFD Rev. A1
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