SGH30N60RUFD
IGBT
SGH30N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
•
•
•
•
•
Short circuit rated 10us @ T
C
= 100°C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 30A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3PN
G C E
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
=100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGH30N60RUFD
600
±
20
48
30
90
25
220
10
235
90
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
us
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.53
0.83
40
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH30N60RUFD Rev. B1
SGH30N60RUFD
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 30mA, V
CE
= V
GE
I
C
= 30A
,
V
GE
= 15V
I
C
= 48A
,
V
GE
= 15V
5.0
--
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1970
310
74
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
30
65
54
138
919
814
1733
34
67
60
281
921
1556
2477
--
85
17
39
14
--
--
80
200
--
--
2430
--
--
90
400
--
--
3470
--
120
25
55
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
us
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 30A,
R
G
= 7Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 30A,
R
G
= 7Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
@
T
C
=
V
CC
= 300 V, V
GE
= 15V
100°C
V
CE
= 300 V, I
C
= 30A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 25A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 25A,
di/dt = 200 A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
50
105
4.5
8.5
112
420
Max.
1.7
--
95
--
10
--
375
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGH30N60RUFD Rev. B1
SGH30N60RUFD
90
80
70
Common Emitter
T
C
= 25℃
20V
15V
90
80
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
Collector Current, I
C
[A]
70
60
50
40
30
20
10
0
Collector Current, I
C
[A]
60
12V
50
40
30
20
10
0
0
2
4
6
8
V
GE
= 10V
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
40
Common Emitter
V
GE
= 15V
60A
35
30
45A
Collector - Emitter Voltage, V
CE
[V]
V
CC
= 300V
Load Current : peak of square wave
4
Load Current [A]
3
30A
2
I
C
= 15A
25
20
15
10
1
5
0
-50
0
50
100
150
0
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 45W
0.1
1
10
100
1000
Case Temperature, T
C
[℃]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
8
60A
4
I
C
= 15A
0
30A
4
I
C
= 15A
0
4
8
30A
60A
12
16
20
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGH30N60RUFD Rev. B1
SGH30N60RUFD
3500
3000
2500
2000
1500
1000
Cres
500
0
1
Coes
Cies
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25℃
━━
T
C
= 125℃ ------
Ton
Capacitance [pF]
Switching Time [ns]
Tr
100
10
10
1
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25℃
━━
T
C
= 125℃ ------
Toff
Toff
Tf
10000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25℃
━━
T
C
= 125℃ ------
Switching Loss [uJ]
Eon
Eoff
1000
Eoff
Tf
100
100
1
10
100
1
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
=
±
15V, R
G
= 7
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
1000
Common Emitter
V
GE
=
±
15V, R
G
= 7
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
Ton
Switching Time [ns]
Switching Time [ns]
Toff
100
Tr
Tf
Toff
100
Tf
10
15
30
45
60
15
30
45
60
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH30N60RUFD Rev. B1
SGH30N60RUFD
10000
Common Emitter
V
GE
=
±
15V, R
G
= 7
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
15
Common Emitter
R
L
= 10
Ω
T
C
= 25℃
V
CC
= 100 V
300 V
200 V
9
Switching Loss [uJ]
Eoff
Eon
1000
Eoff
Gate - Emitter Voltage, V [ V ]
GE
60
12
6
3
100
15
30
45
0
0
20
40
60
80
100
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
200
100
I
C
MAX. (Pulsed)
50us
I
C
MAX. (Continuous)
100us
1㎳
10
DC Operation
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
10
1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
0.1
Safe Operating Area
V
GE
= 20V, T
C
= 100℃
1
1
10
100
1000
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Thermal Response, Zthjc [℃/W]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Pdm
t1
t2
single pulse
1E-3
10
-5
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH30N60RUFD Rev. B1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
