MBRS25HCTC
25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier
Voltage
45 V
Current
25.0 A
TO-263AB / D2PAK
4
2
3
1
FEATURES
Low leakage current
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High frequency operation
High forward surge current capability
Solder dip 260ºC, 10s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260º C
MECHANICAL DATA
Case
:
TO-263AB / D2PAK molded plastic.
Epoxy meets UL 94V-0 flammability rating.
Polarity
:
As marked
Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
HE3 suffix for high reliability grade (AEC Q101 qualified),
meets JESD 201 class 2 whisker test.
CASE
PIN 4
PIN 1
PIN 3
TYPICAL APPLICATIONS
Used in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc converters
or polarity protection application.
Maximun Ratings and Electrical Characteristics at 25°C
MBRS25H45CTC
Marking Code
V
RRM
V
RMS
V
DC
I
F (AV)
I
FSM
T
j
T
stg
Maximum recurrent peak reverse voltage (V)
Maximum RMS voltage (V)
Maximum DC blocking voltage (V)
Maximum average forward rectified
current
@ T
C
= 155 ºC
Total Device
Per Diode
Peak Forward Surge Current 8.3 ms. single
Half Sine-wave Superimposed on Rated
Load (Jedec Method)
Operating junction temperature range
Storage temperature range
Max. instantaneous forward voltage per diode
at I
F
= 12.5 A
(Note 1)
Max. instantaneous forward voltage per diode
(Note 1)
at I
F
= 25 A
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Note 3)
MBRS25H45CTC
45
31
45
25 A
12.5 A
150 A
65° to + 175 °C
65° to + 175 °C
0.70 V
0.60 V
0.90 V
0.75 V
0.2 mA
20 mA
1.5 °C/W
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
thj-C
Maximum D.C. Reverse Current @ Tj = 25 ºC
at Rated DC Blocking Voltage @ Tj = 125 ºC
Typical Thermal Resistance
(Note 2)
Notes: 1. Pulse Test: 300µ Pulse Width, 1% Duty Cycle
2. Thermal Resistance from Junction to Case per diode
3. Pulse test: Pulse width
£
40ms
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Document Name: mbrs25hctc
Version: Nov-11
Page Number: 1/5
MBRS25HCTC
25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier
Ordering information
PREFERRED P/N
MBRS25H45CTC 00TRC
MBRS25H45CTC 00 HE3 TRC
MBRS25H45CTC 00TUC
MBRS25H45CTC 00 HE3 TUC
PACKAGE CODE
TR
TR
TU
TU
DELIVERY MODE
13" diameter tape and reel
13" diameter tape and reel
BASE QUANTITY UNIT WEIGHT (g)
800
800
1000
1000
1.45
1.45
1.45
1.45
TUBE
TUBE
Package Outline Dimensions: (mm)
TO-263AB / D2PAK
4.7
4.10
10.5 MAX.
1.4
1.14
1.65 MAX..
Marking code
Year code
Week code
2.67
2.41
0.94
0.68
0.53
0.36
2.79
2.03
2.79
1.78
9.25
8.25
17.02
15.00
3.81 MIN.
2.032 MIN.
2.67
2.41
Mounting Pad Layout
10.66 MIN.
15.88
14.6
MC
WWY
8.38 MIN.
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Document Name: mbrs25hctc
Version: Nov-11
Page Number: 2/5
MBRS25HCTC
25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier
Ratings and Characteristics
(Ta 25 ºC unless otherwise noted)
TYPICAL FORWARD CHARACTERISTIC
PER DIODE
MAXIMUN FORWARD CURRENT DERATING
CURVE
30
I
F
, instantaneous forward current (A)
100
I
F(AV)
, average forward current (A)
24
18
Tj=125ºC
10
12
Tj=25ºC
6
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
F
, instantaneous forward voltage (V)
0
0
25
50
75 100 125 150 175
T
C
, case temperature (ºC)
MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER DIODE
300
250
200
150
100
50
0
C
j
, junction capacitance (pF)
4000
TYPICAL JUNCTION CAPACITANCE
PER DIODE
T = 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
I
FSM
, peak forward surge current (A)
2000
1000
800
600
400
200
1
2
5
10
20
50 100
100
0.1
0.4
1
2
10
100
Number of cycles at 60 Hz.
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Document Name: mbrs25hctc
V
R
, reverse voltage (V)
Version: Nov-11
Page Number: 3/5
MBRS25HCTC
25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier
Ratings and Characteristics
(Ta 25 ºC unless otherwise noted)
TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100
Transient thermal impedance (°C/W)
10
T
j
= 125 °C
TYPICAL TRANSIENT THERMAL
IMPEDANCE PER DIODE
I
R
, instantaneous reverse current (mA)
1
T
j
=
25 °
C
10
0.1
1
0.01
0.001
0
20
40
60
80
100 120 140
0.1
0.01
0.1
1
10
100
Percent of rated peak reverse voltage (%)
t, Pulse duration (sec.)
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Document Name: mbrs25hctc
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MBRS25HCTC
25.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier
Disclaimer
All product, product specifications and data are subject to change without notice to improve reliability,
function or design or otherwise.
Fagor Electrónica, S.Coop., its affiliates, agents, and employees, and all persons acting on its or their
behalf (collectively, "Fagor"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained
in any datasheet or in any other disclosure relating to any product.
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purpose or the continuing production of any product. To the maximum extent permitted by applicable law,
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liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied
warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
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binding statements about the suitability of products for a particular application. It is the customer's responsibility
to validate that a particular product with the properties described in the product specification is suitable for use in a
particular application. Parameters provided in datasheets and/or specifications may vary in different applications
and performance may vary over time. All operating parameters, including typical parameters, must be validated
for each customer application by the customer's technical experts. Product specifications do not expand or
otherwise modify Fagor's terms and conditions of purchase, including but nos limited to the warranty expressed
therein.
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Document Name: mbrs25hctc
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