BFT57: 产品描述Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN; 产品类别分立半导体晶体管; 文件大小10KB，共1页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/; 标准

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BFT57概述

Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN

BFT57规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	HERMETIC SEALED, METAL, TO-18, 3 PIN
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.2 A
集电极-发射极最大电压	160 V
配置	SINGLE
最小直流电流增益 (hFE)	25
JEDEC-95代码	TO-206AA
JESD-30 代码	O-MBCY-W3
元件数量	1
端子数量	3
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	WIRE
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON
标称过渡频率 (fT)	110 MHz
Base Number Matches	1

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BFT57

Dimensions in mm (inches).

5.84 (0.230)

5.31 (0.209)

4.95 (0.195)

4.52 (0.178)

Bipolar NPN Device in a

Hermetically sealed TO18

Metal Package.

Bipolar NPN Device.

CEO

= 160V

0.48 (0.019)

0.41 (0.016)

dia.

= 0.2A

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

2.54 (0.100)

Nom.

TO18 (TO206AA)

PINOUTS

1 – Emitter

2 – Base

3 – Collector

Parameter

CEO

C(CONT)

Test Conditions

Min.

Typ.

Max.

160

0.2

Units

@ 10/30m (V

/ I

)

110M

0.36

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

2-Aug-02

BFT57相似产品对比

	BFT57	BFT57.MODG4	BFT57G4
描述	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN
是否Rohs认证	符合	符合	符合
包装说明	HERMETIC SEALED, METAL, TO-18, 3 PIN	HERMETIC SEALED, METAL, TO-18, 3 PIN	HERMETIC SEALED, METAL, TO-18, 3 PIN
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.2 A	0.2 A	0.2 A
集电极-发射极最大电压	160 V	160 V	160 V
配置	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	25	25	25
JEDEC-95代码	TO-206AA	TO-206AA	TO-206AA
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1
端子数量	3	3	3
封装主体材料	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子形式	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	110 MHz	110 MHz	110 MHz
Base Number Matches	1	1	1
JESD-609代码	-	e4	e4
端子面层	-	GOLD	GOLD

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