电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JANKC1N4101

产品描述Zener Diode, 8.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1
产品类别分立半导体    二极管   
文件大小114KB,共2页
制造商Compensated Devices Inc
下载文档 详细参数 全文预览

JANKC1N4101概述

Zener Diode, 8.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-1

JANKC1N4101规格参数

参数名称属性值
厂商名称Compensated Devices Inc
包装说明DIE-1
Reach Compliance Codeunknown
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码S-XUUC-N1
元件数量1
端子数量1
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式UNCASED CHIP
极性UNIDIRECTIONAL
最大功率耗散0.5 W
认证状态Not Qualified
参考标准MIL-19500/435
标称参考电压8.2 V
表面贴装YES
技术ZENER
端子形式NO LEAD
端子位置UPPER
最大电压容差5%
工作测试电流0.25 mA
Base Number Matches1

文档预览

下载PDF文档
• 1N4099 THRU 1N4135 AVAILABLE IN
JANHC AND JANKC
PER MIL-PRF-19500/435
• ZENER DIODE CHIPS
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING
• ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD4099
thru
CD4135
MAXIMUM RATINGS
Operating Temperatures: -65°C to +175°C
Storage Temperatures: -65°C to +175°C
Forward Voltage @ 200 mA: 1.5 Volts maximum
23 MILS
15 MILS
CDI
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
V @I
Z
ZT
(Note 1)
VOLTS
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
ZENER
IMPEDANCE
Z
ZT
(Note 2)
MAXIMUM REVERSE
LEAKAGE CURRENT
I @V
R
R
µ
A
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
150
150
150
150
150
150
200
200
200
200
200
250
250
300
300
400
500
700
700
800
1000
1200
1500
µ
A
10.0
10.0
1.0
1.0
1.0
1.0
.05
.05
.05
.05
.05
.05
.05
.05
.05
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
VOLTS
5.17
5.70
6.24
6.61
6.92
7.60
8.44
9.12
9.87
10.65
11.40
12.15
12.92
13.67
14.44
15.20
16.72
18.25
19.00
20.46
21.28
22.80
25.08
27.38
29.65
32.56
35.75
38.76
42.60
45.60
47.10
51.68
57.00
62.32
66.12
69.16
76.00
CD4099
CD4100
CD4101
CD4102
CD4103
CD4104
CD4105
CD4106
CD4107
CD4108
CD4109
CD4110
CD4111
CD4112
CD4113
CD4114
CD4115
CD4116
CD4117
CD4118
CD4119
CD4120
CD4121
CD4122
CD4123
CD4124
CD4125
CD4126
CD4127
CD4128
CD4129
CD4130
CD4131
CD4132
CD4133
CD4134
CD4135
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
87
91
100
Backside is Cathode
FIGURE 1
DESIGN DATA
METALLIZATION:
Top: (Anode)..................... ...Al
Back:(Cathode)...................Au
AL THICKNESS............25,000
Å
Min
GOLD THICKNESS...
.....4,000
Å
Min
CHIP THICKNESS............
......10 Mils
CIRCUIT LAYOUT DATA:
For Zener operation, cathode
must be operated positive with
respect to anode.
TOLERANCES:
ALL
Dimensions + 2 mils
NOTE 1
Zener voltage range equals nominal Zener voltage + 5% for no suffix types.
Zener voltage is read using a pulse measurement, 10 milliseconds maximum.
"C" suffix = + 2% and "D" suffix = + 1%.
NOTE 2
Zener impedance is derived by superimposing on lZT A
60Hz rms a.c. current equal to 10% of lZT.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
15 MILS
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
23 MILS

推荐资源

热门文章更多

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1159  301  1106  1902  779  24  7  23  39  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved