MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR951ALT1/D
The RF Line
NPN Silicon
Low Noise, High-Frequency
Transistors
Designed for use in high gain, low noise small–signal amplifiers. This series
features excellent broadband linearity and is offered in a variety of packages.
•
Fully Implanted Base and Emitter Structure
•
18 Finger, 1.25 Micron Geometry with Gold Top Metal
•
Gold Sintered Back Metal
•
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MMBR951
MRF957
MRF9511
SERIES
IC = 100 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR951LT1, MMBR951ALT1
CASE 419–02, STYLE 3
MRF957T1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF9511LT1
REV 9
MOTOROLA RF
©
Motorola, Inc. 1997
DEVICE DATA
MMBR951 MRF957 MRF9511 SERIES
1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above Tcase = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
PD(max)
IC
TJmax
Tstg
R
θJC
MMBR951LT1
MMBR951ALT1
10
20
1.5
0.322
4.29
100
150
– 55 to +150
233
MRF9511LT1
10
20
1.5
0.322
4.29
100
150
– 55 to +150
233
MRF957T1
10
20
15
0.227
3.03
100
150
– 55 to +150
330
Unit
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
DEVICE MARKING
MRF9511LT1 = 11
MMBR951ALT1 = AAG
MMBR951LT1 = 7Z
MRF957T1 = B
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
Collector Cutoff Current
(VCB = 10 V, IE = 0)
V(BR)CEO
V(BR)CBO
IEBO
ICBO
10
20
—
—
13
25
—
—
—
—
0.1
0.1
Vdc
Vdc
µAdc
µAdc
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
(VCE = 6.0 V, IC = 5.0 mA)
hFE
All
MMBR951ALT1
50
75
—
—
200
150
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
MRF9511LT1, MMBR951LT1, MMBR951ALT1
MRF957T1
Ccb
fT
—
—
8.0
9.0
—
—
—
0.45
1.0
pF
GHz
NOTES:
1. To calculate the junction temperature use TJ = (PD x R
θJA
) + TCASE. Case temperature measured on collector lead immediately adjacent
to body of package.
2. IC — Continuous (MTBF
≈
10 years).
3. Pulse width
≤
300
µs,
duty cycle
≤
2% pulsed.
MMBR951 MRF957 MRF9511 SERIES
2
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
MRF9511LT1
Conditions
y
Symbol
Min
Insertion Gain
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Maximum Unilateral Gain (1)
(VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
|S21|2
—
—
—
GU max
—
—
—
NFMIN
—
—
—
GNF
—
—
—
NF50
Ω
—
14
9.0
—
1.9
—
—
—
2.8
—
—
—
—
13
7.5
—
1.9
—
—
—
2.8
—
—
—
—
11.8
—
9.0
1.9
—
—
—
2.8
dB
1.3
2.1
—
—
—
—
—
—
—
1.3
2.1
—
—
—
—
—
—
—
1.5
—
2.0
—
—
—
dB
17
10.5
—
—
—
—
—
—
—
14
8.0
—
—
—
—
—
—
—
14
—
10.8
—
—
—
dB
14.5
9.0
—
—
—
—
—
—
—
12.5
7.0
—
—
—
—
—
—
—
13.3
—
10.1
—
—
—
dB
Typ
Max
MMBR951LT1
MMBR951ALT1
Min
Typ
Max
Min
MRF957T1
Unit
Typ
Max
dB
|S21|2
(1
–
|S11|2)(1
–
|S22|2)
MOTOROLA RF DEVICE DATA
MMBR951 MRF957 MRF9511 SERIES
3
TYPICAL CHARACTERISTICS
MMBR951LT1, MMBR951ALT1, MRF9511LT1
10
5
CCB , CAPACITANCE (pF)
f = 1 MHz
hFE, DC CURRENT GAIN
VCE = 8 V
2
1
0.5
200
100
50
0.2
0.1
1
2
5
10
20
VCB, REVERSE VOLTAGE (V)
50
100
20
10
1
2
3
5
10
20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 1. Collector–Base Capacitance
versus Voltage
12
f T, GAIN BANDWIDTH PRODUCT (GHz)
10
8
6
4
2
0
VCE = 8 V
1
2
3
5
7
10
20
30
70
100
16
14
12
Figure 2. DC Current Gain versus
Collector Current
|S 21| 2, INSERTION GAIN (dB)
MRF9511LT1
10
8
6
4
MMBR951LT1
VCE = 8 V
f = 1 GHz
1
2
3
5
7
10
20
30
50 70
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
MMBR951 MRF957 MRF9511 SERIES
4
MOTOROLA RF DEVICE DATA
TYPICAL FORWARD INSERTION GAIN AND
MAXIMUM UNILATERAL GAIN versus FREQUENCY
30
|S 21| 2, INSERTION GAIN (dB)
GU max, MAXIMUM UNILATERAL GAIN (dB)
|S 21| 2, INSERTION GAIN (dB)
GU max, MAXIMUM UNILATERAL GAIN (dB)
25
20
GUmax
15
10
5
0
0.1
|S21|2
30
25
20
GUmax
15
10
5
0
0.1
|S21|2
MMBR951LT1
VCE = 8 V
IC = 30 mA
MRF9511LT1
VCE = 8 V
IC = 30 mA
0.2 0.3
0.5 0.7
1
2
3
5
0.2 0.3
0.5 0.7
1
2
3
5
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 5. MRF9511LT1
Figure 6. MMBR951LT1
24
G NF, ASSOCIATED GAIN AT MINIMUM (dB)
20
16
12
8
4
NFmin
0
0.1
0.2
0.3
0.5
0.7
1
2
3
5
CIRCUIT — FIGURE 9
NF50
Ω
MMBR951LT1
GNF
NF, NOISE FIGURE (dB)
6
5
4
3
2
1
0
MRF9511LT1
VCE = 6 V
IC = 5 mA
NF, NOISE FIGURE (dB)
6
5
4
3
2
1
0
NFmin at 1 GHz
MRF9511LT1
MMBR951LT1
CIRCUIT — FIGURE 9
VCE = 6 V
NFmin at 2 GHz
1
2
3
5
7
10
20
30
50
f, FREQUENCY, (GHz)
IC, COLLECTOR CURRENT (mA)
Figure 7. Typical Noise Figure and Associated
Gain versus Frequency
Figure 8. Typical Noise Figure versus
Collector Current
VCE = 6 Vdc
VBE
D.U.T.
RF OUTPUT
RF INPUT
*BIAS **SLUG TUNER
NETWORK
**SLUG TUNER
*BIAS
NETWORK
*HP11590B
**MICROLAB/FXR
**SF
– 11N < 1 GHz
**SF
– 31IN
≥
1 GHz
Figure 9. Functional Circuit Schematic (All Devices)
MOTOROLA RF DEVICE DATA
MMBR951 MRF957 MRF9511 SERIES
5
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