The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 26 April 2000.
INCH-POUND
MIL-PRF-19500/435E
26 January 2000
SUPERSEDING
MIL-S-19500/435D
21 October 1994
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES
1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,
1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES
JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Five levels of product assurance
are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product
assurance for each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.
1.2 Physical dimensions. See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and
JANKC).
1.3 Maximum ratings. Maximum ratings are as shown in 5 and 10 of table II herein and as follows:
P
T
= 500 mW (D0-7, D0-35) at T
L
= 50°C, L = 0.375 inch (9.53 mm); both ends of case or diode body to
heat sink at L = 0.375 inch (9.53 mm). (Derate I
Z
to 0.0 mA dc at +175°C).
P
T
= 500 mW (D0-213AA) at T
EC
= 125°C. (Derate to 0 at 175°C).
-65°C
≤
T
op
≤
+175°C; -65°C
≤
T
STG
≤
+175°C.
1.4 Primary electrical characteristics. Primary electrical characteristic columns 2, 5, 7, 8, and 9 of table II herein
and as follows:
1.8 V dc
≤
V
z
≤
100 V dc.
R
θJL
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).
R
θJEC
= 100°C/W (maximum) junction to endcaps (D0-213AA).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-
VAC, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement
Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/435E
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-
5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein (except for related associated specifications or specification sheets), the text of this document takes
precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the
qualifying activity for listing on the applicable qualified manufacturer's list before contract award (see 4.2 and 6.3).
3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and
as specified herein.
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
TEC .................................................
C
D
Temperature of endcap.
.................................................2 percent voltage tolerance.
.................................................1 percent voltage tolerance.
3.3.1 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug construction
or straight through construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500).
2
MIL-PRF-19500/435E
Ltr
Dimensions
Notes
Inches
Min
BD
BL
LD
LL
LL
1
0.055
0.120
0.018
1.000
Max
0.107
0.300
0.022
1.500
0.050
Millimeters
Min
1.40
3.05
0.46
25.40
Max
2.72
7.62
0.56
38.10
1.27
4
3
3
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this
cylinder but shall not be subject to minimum limit of BD.
4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat
slugs.
FIGURE 1. Semiconductor device, diode, types 1N4099-1 through 1N4135-1
and 1N4614-1 through 1N4627-1 (DO-35 or DO-7).
3
MIL-PRF-19500/435E
Symbol
Dimensions
Inches
Millimeters
Min
Max
Min
Max
BD
ECT
BL
S
0.063
0.016
0.130
0.067
0.022
0.146
1.60
0.41
3.30
1.70
0.55
3.70
0.001 min
0.03 min
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. In accordance with ANSI Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2. Physical dimensions 1N4099UR-1 through 1N4135UR-1 and
1N4614UR-1 through 1N4627UR-1 (DO-213AA).
4
MIL-PRF-19500/435E
JANHCA and JANKCA die
dimensions
Ltr
Min
A
B
0.021
0.013
Inches
Max
0.025
0.017
Millimeters
Min
0.53
0.33
Max
0.63
0.43
A
B
Ltr
JANHCB and JANKCB die
dimensions
Inches
Min
0.024
0.017
Max
0.028
0.021
Millimeters
Min
0.61
0.43
Max
0.71
0.53
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The JANHCA and JANKCA die thickness is 0.010 (0.25 mm)
±
0.002 inches (0.05 mm). Anode
metallization:
Al, thickness = 25,000 Å minimum; cathode metallization: Au, thickness = 4000 Å minimum.
4. The JANHCB and JANKCB die thickness is 0.010 (0.25 mm)
±
.002 inches (0.05 mm). Anode
metallization:
Al, thickness = 40,000 Å minimum; cathode metallization: Au, thickness = 5000 Å minimum.
5. Circuit layout data: For zener operation, cathode must be operated positive with respect to anode.
FIGURE 3. Physical dimensions JANHC and JANKC dice.
5
stm32/stm8
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