Philips Semiconductors
Product specification
Triacs
logic level
GENERAL DESCRIPTION
Passivated, sensitive gate triac in a
plastic envelope, suitable for surface
mounting, intended for use in general
purpose bidirectional switching and
phase control applications. This device
is intended to be interfaced directly to
microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
BT137S-600D
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state voltage
RMS on-state current
Non-repetitive peak on-state current
MAX.
600
8
65
UNIT
V
A
A
PINNING - SOT428
PIN
1
2
3
tab
DESCRIPTION
MT1
MT2
gate
MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltage
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
≤
102 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
600
1
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
June 2001
1
Rev 1.400
Philips Semiconductors
Product specification
Triacs
logic level
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
-
BT137S-600D
TYP.
-
-
75
MAX.
2.0
2.4
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
junction to ambient
pcb (FR4) mounted; footprint as in Fig.14
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
-
-
-
-
-
-
-
-
-
-
-
0.25
-
TYP.
2.5
3.5
3.5
6.5
1.6
8.5
1.2
2.5
1.5
1.3
0.7
0.4
0.1
MAX.
5
5
5
10
15
20
15
20
10
1.65
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; R
GK
= 1 kΩ
I
TM
= 12 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs
MIN.
-
-
TYP.
5
2
MAX.
-
-
UNIT
V/µs
µs
June 2001
2
Rev 1.400
Philips Semiconductors
Product specification
Triacs
logic level
BT137S-600D
12
10
Ptot / W
Tmb(max) / C
101
= 180
120
1
10
IT(RMS) / A
BT137
105
109
90
60
30
8
102 C
8
6
4
2
0
6
113
4
117
121
125
10
2
0
2
4
6
IT(RMS) / A
8
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
IT
I TSM
time
Tj initial = 25 C max
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
IT(RMS) / A
1000
25
20
15
100
dI
T
/dt limit
10
T2- G+ quadrant
5
10
10us
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
T
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
102˚C.
VGT(Tj)
VGT(25 C)
80
70
60
50
40
30
1.6
1.4
1.2
1
0.8
Tj initial = 25 C max
20
10
0.6
0.4
-50
0
1
10
100
Number of cycles at 50Hz
1000
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
June 2001
3
Rev 1.400
Philips Semiconductors
Product specification
Triacs
logic level
BT137S-600D
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
25
IT / A
Tj = 125 C
Tj = 25 C
20
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
max
15
10
1
5
0.5
0
-50
0
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-mb (K/W)
3
2.5
unidirectional
1
bidirectional
2
1.5
1
0.5
0
-50
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1
P
D
tp
t
0
50
Tj / C
100
150
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dVD/dt (V/us)
1000
3
2.5
2
1.5
1
0.5
100
10
0
-50
0
50
Tj / C
100
150
1
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
June 2001
4
Rev 1.400
Philips Semiconductors
Product specification
Triacs
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
6.73 max
1.1
2.38 max
0.93 max
seating plane
BT137S-600D
5.4
tab
4 min
6.22 max
10.4 max
4.6
2
1
2.285 (x2)
0.5 min
0.5
0.3
0.5
3
0.8 max
(x2)
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
June 2001
5
Rev 1.400
嵌入式系统
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