Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation triacs
in a full pack, plastic envelope intended for
use in motor control circuits or with other
highly inductive loads. These devices
balance the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level" D
series are intended for interfacing with low
power drivers, including micro controllers.
BTA216X series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA216X-
BTA216X-
BTA216X-
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
16
140
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
hs
≤
38 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
MAX.
600
1
16
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
140
150
98
100
2
5
0.5
150
125
A
A
A
2
s
A/µs
A
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
April 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
BTA216X series D, E and F
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.0
5.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
BTA216X-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
-
-
-
-
-
-
-
-
-
0.25
-
MIN.
...D
5
5
5
15
25
25
15
MAX.
...E
10
10
10
25
30
30
25
...D, E, F
V
T
V
GT
I
D
On-state voltage
Gate trigger voltage
Off-state leakage current
1.5
1.5
-
0.5
V
V
V
mA
...F
25
25
25
30
40
40
30
mA
mA
mA
mA
mA
mA
mA
UNIT
I
L
Latching current
I
H
Holding current
2
Device does not trigger in the T2-, G+ quadrant.
April 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
CONDITIONS
BTA216X-
V
DM
= 67% V
DRM(max)
;
T
j
= 110 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 125 ˚C;
I
T(RMS)
= 16 A;
dV
com
/dt = 10V/µs; gate
open circuit
V
DM
= 400 V; T
j
= 125 ˚C;
I
T(RMS)
= 16 A;
dV
com
/dt = 0.1V/µs; gate
open circuit
BTA216X series D, E and F
MIN.
...D
30
...E
60
...F
70
MAX.
-
UNIT
V/µs
dI
com
/dt
2.5
6.2
18
-
A/ms
dI
com
/dt
12
20
50
-
A/ms
April 2002
3
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216X series D, E and F
25
Ptot / W
Ths(max) / C
= 180
25
20
IT(RMS) / A
BT139X
20
1
120
90
45
38 C
15
15
60
30
65
10
85
10
5
105
5
0
0
5
10
IT(RMS) / A
15
125
20
0
-50
0
50
Ths / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
IT(RMS) / A
1000
50
40
dI
T
/dt limit
100
30
20
IT
T
10
10us
I TSM
time
10
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
T
100
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
hs
≤
38˚C.
VGT(Tj)
VGT(25 C)
150
1.6
1.4
1.2
1
Tj initial = 25 C max
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
April 2002
4
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216X series D, E and F
IGT(Tj)
IGT(25°C)
3
T2+ G+
T2+ G-
T2- G-
50
IT / A
Tj = 125 C
Tj = 25 C
BT139
2.5
40
typ
Vo = 1.195 V
Rs = 0.018 Ohms
max
2
30
1.5
20
1
0.5
10
0
-50
0
0
Tj/°C
50
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
3
2.5
2
1.5
1
1
unidirectional
bidirectional
0.1
P
D
tp
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dIcom/dt (A/ms)
100
F TYPE
E TYPE
D TYPE
3
2.5
2
10
1.5
1
0.5
0
-50
1
0
50
Tj / C
100
150
20
40
60
80
Tj/˚C
100
120
140
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Minimum, critical rate of change of
commutating current dI
com
/dt versus junction
temperature, dV
com
/dt = 10V/µs.
April 2002
5
Rev 2.000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
