HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2005.04.18
Page No. : 1/4
HBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC807 is designed for switching and AF amplifier amplification suitable for driver
stages and low power output stages.
Feature
•
Collector current capability I
C
=-800mA
•
Collector-emitter voltage V
CEO(max)
=-45V
•
General purpose switching and amplification
•
NPN complement: HBC817 series
•
Pb-Free Package is available
SOT-23
Absolute Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation (T
A
=25
o
C)
Total Device Dissipation (Dreate above 25
o
C)
Thermal Resistance, Junction to Ambient
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
R
θJA
Value (Max.)
-45
-50
-5
-800
225
1.8
556
Unit
V
V
V
mA
mW
mW/
o
C
o
C/W
Electrical Characteristics
(T =25°C, unless otherwise noted.)
A
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BV
CEO
BV
CES
BV
EBO
I
CES
*h
FE
*h
FE2
*V
CE(sat)
V
BE(on)
f
T
Cob
Test Conditions
I
C
=-10mA
I
C
=-100uA
I
E
=-100uA
V
CB
=-25V
V
CB
=-20V, T
J
=150
o
C
I
C
=-100mA, V
CE
=-1V
I
C
=-500mA, V
CE
=-1V
I
C
=-500mA, I
B
=-50mA
I
C
=-300mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-5V, f=100MHz
V
CB
=-10V, f=1MHz
Min.
-45
-50
-5
-
-
100
40
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
-100
-5
630
-
-0.7
-1.2
-
12
Unit
V
V
V
nA
uA
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On VOltage
Current-Gain-Bandwidth Product
Output Capacitance
V
V
MHz
pF
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank(Marking)
hFE
16(5A)
100-250
25(5B)
160-400
40(5C)
250-630
HBC807
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2005.04.18
Page No. : 2/4
Saturation Voltage & Collector Current
1000
V
CE
=1V
Saturation Voltage (mV)
hFE
100
100
V
CE(sat)
@ I
C
=10IB
10
0.1
1
10
100
1000
10
1
10
100
1000
Collector Current(mA)
Collector Current (mA)
On Voltage & Collector Current
10000
1000
Cutoff Frequency & Collector Current
Cutoff Frequency (MHz)
V
CE
=5V
On Voltage (mV)
1000
V
BE(on)
@ V
CE
=1V
100
100
0.1
1
10
100
1000
10
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
10
Safe Operating Area
PT=1ms
Collector Current-IC (mA)
1
PT=100ms
Capacitance (pF)
Cob
10
0.1
PT=1s
0.01
1
0.1
1
10
100
0.001
1
10
100
Reverse Biased Voltage (V)
Forward Voltage Vce (V)
HBC807
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2005.04.18
Page No. : 3/4
A
L
Series Code
(See Page1)
5
3
Pb Free Mark
B S
1
2
Pb-Free: " "
(Note)
Normal: None
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
V
G
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBC807
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2005.04.18
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
Pb-Free Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±
5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±
1sec
5sec
±
1sec
HBC807
HSMC Product Specification
下载中心专版
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
