DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMD3
NPN/PNP resistor-equipped
transistors
Product specification
Supersedes data of 1999 Apr 13
2001 Feb 16
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
FEATURES
•
Transistors with different polarity
and built-in bias resistors
– TR1 (NPN):
R1 = R2 = 10 kΩ
– TR2 (PNP):
R1 = R2 = 10 kΩ
•
No mutual interference between
the transistors
•
Simplification of circuit design
•
Reduces number of components
and board space.
APPLICATIONS
•
Especially suitable for space
reduction in interface and driver
circuits
•
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN/PNP resistor-equipped
transistors in an SC-88 (SOT363)
plastic package.
1
Top view
2
3
MAM343
PUMD3
handbook, halfpage
6
5
4
R1
TR1
R2
5
4
6
R2
TR2
R1
1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
PINNING
PIN
1, 4
2, 5
1, 4
MBK120
DESCRIPTION
emitter
base
collector
TR1; TR2
TR1; TR2
TR1; TR2
6, 3
2, 5
6, 3
MARKING
Fig.2
Equivalent inverter
symbol.
TYPE NUMBER
PUMD3
MARKING
CODE
Dt3
2001 Feb 16
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MIN.
PUMD3
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
300
mW
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
+40
−10
100
100
200
+150
150
+150
V
V
mA
mA
mW
°C
°C
°C
open emitter
open base
open collector
50
50
10
V
V
V
2001 Feb 16
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
30
−
−
2.5
2.5
7
0.8
I
E
= i
e
= 0; V
CB
= 10 V;
f = 1 MHz
TYP.
−
−
−
−
−
−
1.1
1.8
1.8
10
1
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
416
PUMD3
UNIT
K/W
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
TR1 (NPN)
TR2 (PNP)
R1
R2
------
-
R1
C
c
input resistor
resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 5 V
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100
µA;
V
CE
= 5 V
I
C
= 10 mA; V
CE
= 0.3 V
−
−
13
1.2
V
V
kΩ
100
1
50
400
−
150
0.8
mV
V
nA
µA
µA
µA
I
B
= 0; V
CE
= 30 V; T
j
= 150
°C −
−
−
−
−
2.5
3
pF
pF
2001 Feb 16
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD3
handbook, halfpage
10
3
MGM898
handbook, halfpage
1
MGM897
hFE
(2)
(1)
VCEsat
(V)
10
2
(3)
10
−1
(1)
(2)
(3)
10
1
10
−1
1
10
IC (mA)
10
2
10
−2
1
10
IC (mA)
10
2
TR1 (NPN);
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
TR1 (NPN);
I
C
/I
B
= 20.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
handbook, halfpage
10
MGM900
10
2
handbook, halfpage
Vi(on)
MGM899
Vi(off)
(V)
(V)
10
(1)
(2)
(3)
(1) (2) (3)
1
1
10
−1
10
−2
10
−1
1
IC (mA)
10
10
−1
10
−1
1
10
IC (mA)
10
2
TR1 (NPN);
V
CE
= 5 V.
(1) T
amb
=
−40 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 100
°C.
TR1 (NPN);
V
CE
= 0.3 V.
(1) T
amb
=
−40 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 100
°C.
Fig.5
Input-off voltage as a function of collector
current; typical values.
Fig.6
Input-on voltage as a function of collector
current; typical values.
2001 Feb 16
5
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