SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000
FEATURES
* 5 Amps continuous current , up to 15 Amps peak current
* Very low saturation voltages
* Excellent gain characteristics specified up to 10 Amps
*
P
tot
= 3 watts
* FZT951 exhibts extremely low equivalent on resistance;
R
CE(sat)
55m at 4A
COMPLEMENTARY TYPES - FZT951 = FZT851
FZT953 = FZT853
PARTMARKING DETAILS -
DEVICE TYPE IN FULL
FZT951
FZT953
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-15
-5
3
-55 to +150
FZT951
-100
-60
-6
-10
FZT953
-140
-100
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 279
FZT951
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(sat)
-20
-85
-155
-370
-1080
-935
100
100
75
10
200
200
90
25
120
74
82
350
MIN.
-100
-100
-60
-6
TYP.
-140
-140
-90
-8
-50
-1
-50
-1
-10
-50
-140
-210
-460
-1240
-1070
MAX.
UNIT
V
V
V
V
nA
A
nA
A
CONDITIONS.
I
C
=-100 A
I
C
=-1 A, RB 1k
I
C
=-10mA*
I
E
=-100 A
V
CB
=-80V
V
CB
=-80V, T
amb
=100°C
V
CB
=-80V
V
CB
=-80V, T
amb
=100°C
V
EB
=-6V
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5A, I
B
=-500mA*
I
C
=-5A, I
B
=-500mA*
I
C
=-5A, V
CE
=-1V*
I
C
=-10mA, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
MHz
pF
ns
ns
2%
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-2A, I
B1
=-200mA
I
B2
=200mA, V
CC
=-10V
nA
mV
mV
mV
mV
mV
mV
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
300
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
3 - 280
* Measured under pulsed conditions. Pulse width =300 s. duty cycle
Spice parameter data is available upon request for this device
FZT951
TYPICAL CHARACTERISTICS
I
C
/I
B
=50
I
C
/I
B
=10
T
amb
=25°C
1.6
-55°C
+25°C
+175°C
1.6
I
C
/I
B
=10
V
CE(sat)
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10 20
V
CE(sat)
- (Volts)
1.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10 20
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
h
FE
- Normalised Gain
h
FE
- Typical Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+100°C
+25°C
-55°C
V
CE
=1V
300
1.6
1.4
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
V
BE(sat)
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
200
100
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10 20
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
100
-55°C
+25°C
+100°C
+175°C
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
1.6
1.4
V
CE
=1V
I
C
- Collector Current (Amps)
V
BE
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10 20
10
1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
0.1
1
10
100
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3 - 281
FZT953
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(sat)
-20
-90
-160
-300
-1010
-925
100
100
50
30
200
200
90
50
15
125
65
110
460
MIN.
-140
-140
-100
-6
TYP.
-170
-170
-120
-8
-50
-1
-50
-1
-10
-50
-115
-220
-420
-1170
-1160
MAX.
UNIT
V
V
V
V
nA
A
nA
A
CONDITIONS.
I
C
=-100 A
I
C
=-1 A, RB 1k
I
C
=-10mA*
I
E
=-100 A
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
V
EB
=-6V
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-4A, V
CE
=-1V*
I
C
=-10mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-3A, V
CE
=-1V*
I
C
=-4A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
MHz
pF
ns
ns
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-2A, I
B1
=-200mA
I
B2
=200mA, V
CC
=-10V
nA
mV
mV
mV
mV
mV
mV
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
BE(sat)
V
BE(on)
h
FE
300
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 282
FZT953
TYPICAL CHARACTERISTICS
1.6
I
C
/I
B
=50
I
C
/I
B
=10
T
amb
=25°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10 20
-55°C
+25°C
+175°C
I
C
/I
B
=10
V
CE(sat)
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
-
Collector Current (Amps)
V
CE(sat)
- (Volts)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.6
h
FE
- Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
+100°C
+25°C
-55°C
V
CE
=1V
300
1.6
h
FE
- Typical Gain
1.4
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
V
BE(sat)
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
200
100
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10 20
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
10
-55°C
+25°C
+100°C
+175°C
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
1.6
1.4
V
CE
=1V
I
C
- Collector Current (Amps)
V
BE
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10 20
1
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0.1
1
10
100
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3 - 283
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