PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
* V
CEO
= -40V
* 3 Amp Continuous Current
* 5 Amp Pulse Current
* Low saturation Voltage
* High Gain
FZT1151A
C
E
C
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
†
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-45
-40
-5
-5
-3
-500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
Operating and Storage Temperature
Range
† The power which can be dissipated assuming the device is mounted in a typical manner on
a P.C.B. with copper equal to 2 inches x 2 inches
FZT1151A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
VALUE
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
MIN.
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
-45
-40
-40
-40
-5
TYP.
-95
-90
-85
-90
-8.5
-0.3
-0.3
-0.3
-60
-120
-140
-170
-200
-985
-850
270
250
180
100
450
400
300
190
45
145
40
170
460
-100
-100
-100
-90
-180
-220
-260
-300
-1100
-1000
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100µA
I
C
=-100µA
I
C
=-10mA *
I
C
=-100µA, V
EB
=+1V
I
E
=-100µA
V
CB
=-36V
V
EB
=-4V
V
CE
=-32V
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-5mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.8A, I
B
=-70mA*
I
C
=-3A, I
B
=-250mA*
I
C
=-3A, I
B
=-250mA*
I
C
=-3A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
Emitter Cut-Off Current I
EBO
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
I
CES
V
CE(sat)
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
800
Transition Frequency
Output Capacitance
Switching Times
f
T
C
cb
t
on
t
off
MHz
pF
ns
ns
I
C
=-50mA, V
CE
=-10V
f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-2A, I
B
=-20mA,
V
CC
=-30V
I
C
=-2A, I
B
=±20mA,
V
CC
=-30V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%.
FZT1151A
THERMAL CHARACTERISTICS
4
Thermal Resistance (°C/W)
50
40
D=1
t1
D=t1
tP
tP
Max Power Dissipation - (Watts)
3
30
20
10
0
100µs
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
2
1
0
0
20
40
60
80
100
120
140
160
1ms
10ms 100ms
1s
10s
100s
Pulse Width
T - Ambient Temperature (°C)
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX FZT1151A Spice model Last revision 12/12/96
*
.MODEL
FZT1151A PNP IS =1.7e-12 NF =1.004 ISE=1.02e-13
+
NE =1.55 BF =562 VAF=26.01 IKF=3.5 NR =.97
+
ISC= 1.5e-13 NC =1.3 BR =38 VAR=2.41 IKR=0.3
+
RE =25.37e-3 RB =250e-3 RC =25e-3 CJE=440e-12
+
CJC=160e-12 VJC=1.058 MJC= 0.5678 TF =0.8e-9 TR =55.5e-9
*
©
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given
and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
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