BF543
N-Channel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
High frequency stages up to 300 MHz.
Features
D
Integrated gate protection diode
D
Low noise figure
D
Low feedback capacitance
1
G
13 581
94 9280
D
2
3
12624
BF543 Marking: LD
Plastic case (SOT 23)
1= Source; 2= Gate; 3= Drain
S
Absolute Maximum Ratings
Parameters
Drain source voltage
Drain current
Gate-source peak current
Total power dissipation T
amb
≤
60°C
Channel temperature
Storage temperature range
Symbol
V
DS
I
D
±I
GSM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Parameters
Channel ambient on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 11-Apr-97
1 (4)
BF543
Electrical DC Characteristics
T
amb
= 25°C
Parameters / Test Conditions
Drain-source breakdown voltage
I
D
= 10
mA, -
V
GS
= 4 V
Gate-source breakdown voltage
±I
GS
= 10 mA, V
DS
= 0
Gate-source leakage current
±V
GS
= 6 V, V
DS
= 0
Drain current
V
DS
= 10 V, V
GS
= 0
Type
Symbol
V
(BR)DS
±V
(BR)GSS
±I
GSS
BF 543
BF 543 A
BF 543 B
I
DSS
I
DSS
I
DSS
–V
GS(OFF)
1.5
1.5
4.0
0.7
Min.
20
7
12
50
8.0
6.5
8.0
1.5
Typ.
Max.
Unit
V
V
nA
mA
mA
mA
V
Gate-source cut-off voltage
V
DS
= 10 V, I
D
= 20
mA
Electrical AC Characteristics
V
DS
= 10 V, I
D
= 4 mA, f = 1 MHz, T
amb
= 25°C
Parameters / Test Conditions
Forward transadmittance
Gate input capacitance
Feedback capacitance
Output capacitance
Power gain
g
S
= 2 mS, g
L
= 0.5 mS, f = 200 MHz
Noise figure
g
S
= 2 mS, g
L
= 0.5 mS, f = 200 MHz
Type
Symbol
y
21s
C
issg
C
rss
C
oss
G
ps
F
Min.
9.5
Typ.
12
2.7
25
0.9
22
1.0
Max.
Unit
mS
pF
fF
pF
dB
dB
2 (4)
TELEFUNKEN Semiconductors
Rev. A2, 11-Apr-97
BF543
Ozone Depleting Substances Policy Statement
It is the policy of
TEMIC TELEFUNKEN microelectronic GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH
semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC
can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
TELEFUNKEN Semiconductors
Rev. A2, 11-Apr-97
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