OM6407SDT概述

Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

OM6407SDT规格参数

参数名称	属性值
厂商名称	Omnirel Corp
Reach Compliance Code	unknown
其他特性	HIGH RELIABILITY
外壳连接	ISOLATED
配置	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	400 V
最大漏极电流 (ID)	5.5 A
最大漏源导通电阻	1.05 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-MDFM-F16
元件数量	4
端子数量	16
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	20 A
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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OM6407SDT相似产品对比

	OM6407SDT	OM6405SDV	OM6405SDT	OM6406SDV	OM6406SDT	OM6408SDV	OM6408SDT	OM6407SDV
描述	Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
厂商名称	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp	Omnirel Corp
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	400 V	100 V	100 V	200 V	200 V	500 V	500 V	400 V
最大漏极电流 (ID)	5.5 A	14 A	14 A	9 A	9 A	4.5 A	4.5 A	5.5 A
最大漏源导通电阻	1.05 Ω	0.2 Ω	0.2 Ω	0.44 Ω	0.44 Ω	1.6 Ω	1.6 Ω	1.05 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16
元件数量	4	4	4	4	4	4	4	4
端子数量	16	16	16	16	16	16	16	16
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	20 A	30 A	30 A	25 A	25 A	18 A	18 A	20 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

OM6407SDT

OM6407SDT概述

OM6407SDT规格参数

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OM6407SDT相似产品对比

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