Power Field-Effect Transistor, 22A I(D), 100V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
| 参数名称 | 属性值 |
| 厂商名称 | Omnirel Corp |
| Reach Compliance Code | unknown |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 22 A |
| 最大漏源导通电阻 | 0.095 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | S-CQCC-N28 |
| 元件数量 | 1 |
| 端子数量 | 28 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 36 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | QUAD |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| OM6009SMT | OM6009SMV | OM6010SMT | OM6010SMV | |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 22A I(D), 100V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 22A I(D), 100V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
| 厂商名称 | Omnirel Corp | Omnirel Corp | Omnirel Corp | Omnirel Corp |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 200 V | 200 V |
| 最大漏极电流 (ID) | 22 A | 22 A | 18 A | 18 A |
| 最大漏源导通电阻 | 0.095 Ω | 0.095 Ω | 0.18 Ω | 0.18 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | S-CQCC-N28 | S-CQCC-N28 | S-CQCC-N28 | S-CQCC-N28 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 36 A | 36 A | 29 A | 29 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | QUAD | QUAD | QUAD | QUAD |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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