SML100H9: 产品描述Power Field-Effect Transistor, 9A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN; 产品类别分立半导体晶体管; 文件大小27KB，共2页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/

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SML100H9概述

Power Field-Effect Transistor, 9A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN

SML100H9规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	TT Electronics plc
包装说明	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant
雪崩能效等级（Eas）	1210 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	1000 V
最大漏极电流 (ID)	9 A
最大漏源导通电阻	1.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-258AA
JESD-30 代码	R-MSFM-P3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	36 A
认证状态	Not Qualified
表面贴装	NO
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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SML100H9

TO–258 Package Outline.

Dimensions in mm (inches)

17.65 (0.695)

17.39 (0.685)

6.86 (0.270)

6.09 (0.240)

1.14 (0.707)

0.88 (0.035)

17.96 (0.707)

17.70 (0.697)

13.84 (0.545)

13.58 (0.535)

1 2 3

4.19 (0.165)

3.94 (0.155)

Dia.

21.21 (0.835)

20.70 (0.815)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

DSS

1000V

D(cont)

Ω

DS(on)

1.100Ω

3.56 (0.140)

BSC

19.05 (0.750)

12.70 (0.500)

5.08 (0.200)

BSC

1.65 (0.065)

1.39 (0.055)

Typ.

Pin 1 – Drain

Pin 2 – Source

Pin 3 – Gate

• Faster Switching

• Lower Leakage

• TO–258 Hermetic Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSM

, T

STG

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate – Source Voltage

Gate – Source Voltage Transient

Total Power Dissipation @ T

case

= 25°C

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1000

±30

±40

200

1.6

–55 to 150

300

1210

W/°C

°C

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting T

= 25°C, L = 29.88mH, R

= 25Ω, Peak I

= 9A

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

6/99

SML100H9相似产品对比

	SML100H9	SML100H9R1
描述	Power Field-Effect Transistor, 9A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN	Power Field-Effect Transistor, 9A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
是否Rohs认证	不符合	符合
厂商名称	TT Electronics plc	TT Electronics plc
包装说明	FLANGE MOUNT, R-MSFM-P3	TO-258, 3 PIN
Reach Compliance Code	compliant	compliant
雪崩能效等级（Eas）	1210 mJ	1210 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	1000 V	1000 V
最大漏极电流 (ID)	9 A	9 A
最大漏源导通电阻	1.1 Ω	1.1 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-258AA	TO-258AA
JESD-30 代码	R-MSFM-P3	R-MSFM-P3
元件数量	1	1
端子数量	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
封装主体材料	METAL	METAL
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	36 A	36 A
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1

SML100H9

SML100H9概述

SML100H9规格参数

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