INTEGRATED CIRCUITS
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
Product data
Supersedes data of 1997 Sep 29
2001 Aug 03
Philips
Semiconductors
Philips Semiconductors
Product data
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
DESCRIPTION
The 5532 is a dual high-performance low noise operational amplifier.
Compared to most of the standard operational amplifiers, such as
the 1458, it shows better noise performance, improved output drive
capability and considerably higher small-signal and power
bandwidths.
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be
used because it has guaranteed noise voltage specifications.
PIN CONFIGURATIONS
N, D8 Packages
OUTPUT A
INVERTING INPUT A
NON-INVERTING INPUT A
V-
1
2
3
4
A
B
8 V+
7 OUTPUT B
6 INVERTING INPUT B
5 NON-INVERTING INPUT B
TOP VIEW
D Package
1
–IN
A
+IN
A
NC
–V
CC
NC
NC
+IN
B
–IN
B
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
NC
NC
OUT
A
+V
CC
OUT
B
NC
NC
FEATURES
•
Small-signal bandwidth: 10 MHz
•
Output drive capability: 600
Ω,
10 V
RMS
•
Input noise voltage: 5 nV/√Hz (typical)
•
DC voltage gain: 50000
•
AC voltage gain: 2200 at 10 kHz
•
Power bandwidth: 140 kHz
•
Slew rate: 9 V/µs
•
Large supply voltage range:
±3
to
±20
V
•
Compensated for unity gain
ORDERING INFORMATION
DESCRIPTION
8-Pin Small Outline Package (SO)
8-Pin Plastic Dual In-Line Package (DIP)
16-Pin Plastic Small Outline Large (SOL) Package
8-Pin Small Outline Package (SO)
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Small Outline Package (SO)
16-Pin Plastic Dual In-Line Package (DIP)
TOP VIEW
NOTE:
1. SOL and non-standard pinout.
SL00332
Figure 1. Pin Configurations
TEMPERATURE RANGE
0
°C
to 70
°C
0
°C
to 70
°C
0
°C
to 70
°C
0
°C
to 70
°C
0
°C
to 70
°C
–40
°C
to +85
°C
–55
°C
to +125
°C
–55
°C
to +125
°C
ORDER CODE
NE5532AD8
NE5532AN
NE5532D
NE5532D8
NE5532N
SA5532N
SE5532AD8
SE5532N
DWG #
SOT96-1
SOT97-1
SOT162-1
SOT96-1
SOT97-1
SOT97-1
SOT96-1
SOT38-4
2001 Aug 03
2
853-0949 26836
Philips Semiconductors
Product data
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
EQUIVALENT SCHEMATIC (EACH AMPLIFIER)
+
_
SL00333
Figure 2. Equivalent Schematic (Each Amplifier)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
S
V
IN
V
DIFF
T
amb
Supply voltage
Input voltage
Differential input voltage
1
Operating temperature range
NE5532/A
SA5532
SE5532/A
Storage temperature
Junction temperature
Maximum power dissipation,
T
amb
= 25
°C
(still-air)
2
8 D8 package
8 N package
16 D package
Lead soldering temperature (10 sec max)
PARAMETER
RATING
±22
±V
SUPPLY
±0.5
0 to 70
–40 to +85
–55 to +125
–65 to +150
150
UNIT
V
V
V
°C
°C
°C
°C
°C
T
stg
T
j
P
D
780
1200
1200
230
mW
mW
mW
°C
T
sld
NOTES:
1. Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V. Maximum current should be limited to
±10
mA.
2. Thermal resistances of the above packages are as follows:
N package at 100
°C/W
D package at 105
°C/W
D8 package at 160
°C/W
2001 Aug 03
3
Philips Semiconductors
Product data
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
DC ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
V
S
=
±15
V, unless otherwise specified.
1, 2, 3
SYMBOL
V
OS
∆V
OS
/∆T
I
OS
∆I
OS
/∆T
I
B
∆I
B
/∆T
I
CC
V
CM
CMRR
PSRR
Supply current
Over temperature
Common-mode input range
Common-mode rejection ratio
Power supply rejection ratio
R
L
≥
2 kΩ; V
O
=
±10
V
Over temperature
R
L
≥
600
Ω;
V
O
=
±10
V
Over temperature
R
L
≥
600
Ω
Over temperature
R
L
≥
600
Ω;
V
S
=
±18
V
Over temperature
R
L
≥
2 kΩ
Over temperature
50
25
40
20
±12
±10
±15
±12
±13
±12
30
10
±12
80
±13
100
10
100
50
±13
±12
±16
±14
±13.5
±12.5
300
38
60
50
25
15
15
10
±12
±10
±15
±12
±13
±10
30
10
13
±12
70
±13
100
10
100
50
±13
±12
±16
±14
±13.5
±12.5
300
38
60
100
mA
V
dB
µV/V
V/mV
V/mV
V/mV
V/mV
Input current
Over temperature
5
8
10.5
Offset current
Over temperature
200
200
400
700
PARAMETER
Offset voltage
Over temperature
5
100
200
TEST CONDITIONS
SE5532/A
Min
Typ
0.5
Max
2
3
NE5532/A, SA5532
Min
Typ
0.5
5
10
200
200
5
8
16
800
1000
150
200
Max
4
5
UNIT
mV
mV
µV/°C
nA
nA
pA/°C
nA
nA
nA/°C
mA
A
VOL
Large-signal voltage gain
V
OUT
Out ut
Output swing
V
R
IN
I
SC
Input resistance
Output short circuit current
kΩ
mA
NOTES:
1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6 V. Maximum current should be limited to
±10
mA.
2. For operation at elevated temperature, derate packages based on the package thermal resistance.
3. Output may be shorted to ground at V
S
=
±15
V, T
amb
= 25
°C.
Temperature and/or supply voltages must be limited to ensure dissipation
rating is not exceeded.
AC ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
V
S
=
±15
V, unless otherwise specified.
SYMBOL
R
OUT
PARAMETER
Output resistance
TEST CONDITIONS
A
V
= 30 dB Closed-loop
f = 10 kHz, R
L
= 600
Ω
Voltage-follower
V
IN
= 100 mV
P-P
C
L
= 100 pF; R
L
= 600
Ω
f = 10 kHz
C
L
= 100 pF; R
L
= 600
Ω
V
OUT
=
±10
V
V
OUT
=
±14
V; R
L
= 600
Ω,
V
CC
=±18V
NE/SE5532/A, SA5532
Min
Typ
0.3
Max
UNIT
Ω
Overshoot
A
V
GBW
SR
Gain
Gain bandwidth product
Slew rate
Power bandwidth
10
2.2
10
9
140
100
%
V/mV
MHz
V/µs
kHz
kHz
2001 Aug 03
4
Philips Semiconductors
Product data
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
V
S
=
±15
V, unless otherwise specified.
SYMBOL
V
NOISE
I
NOISE
PARAMETER
Input noise voltage
Input noise current
Channel separation
TEST CONDITIONS
f
O
= 30 Hz
f
O
= 1 kHz
f
O
= 30 Hz
f
O
= 1 kHz
f = 1 kHz; R
S
= 5 kΩ
NE/SE5532
Min
Typ
8
5
2.7
0.7
110
Max
NE/SA/SE5532A
Min
Typ
8
5
2.7
0.7
110
Max
12
6
UNIT
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
dB
TYPICAL PERFORMANCE CHARACTERISTICS
Open-Loop Frequency
Response
120
TYPICAL VALUES
RF = 10 kΩ; RE = 100
Ω
80
GAIN (dB)
GAIN (dB)
40
30
60
TYPICAL VALUES
Closed-Loop Frequency
Response
40
Large-Signal Frequency
Response
V
S
=
±15
V
TYPICAL VALUES
RF = 9 kΩ; RE = 1 kΩ
20
40
(V)
Vo(p-p)
20
0
RF = 1 kΩ; RE =
∞
0
10
-40
10 10
2
10
3
10
4
10
5
10
6
10
7
f (Hz)
-20
10
3
10
4
10
5
10
6
10
7
f (Hz)
10
8
0
10
2
10
3
10
4
10
5
10
6
10
7
f (Hz)
Output Short-Circuit Current
80
V
S
=
±15
V
60
1,2
1,4
Input Bias Current
V
S
=
±15
V
30
Input Commom-Mode
Voltage Range
TYPICAL VALUES
20
I
O
40
(mA)
TYP
I
I
(mA)
0,8
V
IN
(V)
10
20
0,4
0
-55 -25
0
0
25
50
75 100 +125
-55 -25
0
25
50
75 100 +125
T
amb
(
o
C)
T
amb
(
o
C)
0
0
10
Vp; –V
N
(V)
20
Supply Current
6
I
O
= 0
TYP
10
10
–2
Input Noise Voltage Density
4
I
P
I
N
TYP
1
(nV
2
Hz
)
(mA)
10
–1
0
0
10
20
Vp; –V
N
(V)
10
–2
10
10
2
10
3
10
4
f (Hz)
SL00334
Figure 3. Typical Performance Characteristics
2001 Aug 03
5
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