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SMA4032

产品描述Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA, 12 PIN
产品类别分立半导体    晶体管   
文件大小23KB,共1页
制造商Allegro
官网地址http://www.allegromicro.com/
下载文档 详细参数 选型对比 全文预览

SMA4032概述

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA, 12 PIN

SMA4032规格参数

参数名称属性值
是否Rohs认证不符合
包装说明SMA, 12 PIN
针数12
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)3 A
集电极-发射极最大电压100 V
配置COMPLEX
最小直流电流增益 (hFE)2000
JESD-30 代码R-PSIP-T12
JESD-609代码e0
元件数量4
端子数量12
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON
标称过渡频率 (fT)40 MHz
Base Number Matches1

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SLA4031
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
F
I
FSM
V
R
P
T
V
ISO
T
j
T
stg
θ
j-c
Specification
120
120
6
4
6 (PW≤1ms, D
u
≤50%)
0.5
4 (PW≤0.5ms, D
u
≤25%)
6 (PW≤10ms, Single)
120
5 (T
a
=25°C)
25 (T
c
=25°C)
1000 (Between fin and lead pin, AC)
150
–40 to +150
5
NPN Darlington
With built-in flywheel diode
(T
a
=25°C)
External dimensions
A
•••
SLA
Electrical characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
V
BE
(sat)
t
on
t
stg
t
f
120
2000
min
Specification
typ
max
10
10
5000
1.0
1.6
0.6
5.0
2.0
15000
1.5
2.0
Unit
(T
a
=25°C)
Unit
V
V
V
A
A
A
A
A
V
W
V
rms
°C
°C
°C/W
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=2V, I
C
=2A
I
C
=2A, I
B
=2mA
V
CC
40V,
I
C
=2A,
I
B1
=–I
B2
=10mA
(T
a
=25°C)
µ
A
mA
V
V
V
µ
s
µ
s
µ
s
sDiode
for flyback voltage absorption
Symbol
V
R
V
F
I
R
t
rr
min
120
1.2
10
100
Specification
typ
max
Unit
V
V
µ
A
ns
Conditions
I
R
=10
µ
A
I
F
=1A
V
R
=120V
I
F
=±100mA
sEquivalent
circuit diagram
2
3
4
9
10 11
1
R
1
R
2
5
8
12
6
7
R
1
: 3kΩ typ R
2
: 500Ω typ
Characteristic curves
I
C
-V
CE
Characteristics (Typical)
4
0.8m
I
B
=
1m
A
h
FE
-I
C
Characteristics (Typical)
20000
h
FE
-I
C
Temperature Characteristics (Typical)
20000
10000
(V
CE
=2V)
(V
CE
=2V)
A
0.6mA
10000
typ
3
0.5mA
5000
5000
25
°
C
0.4mA
I
C
(A)
T
a
=1
h
FE
2
0.3mA
h
FE
1000
500
1000
500
°
C
75
°
C
25
C
0
°
–3
1
100
50
100
50
20
0.02
0
0
1
2
3
4
5
20
0.02
0.05
0.1
0.5
1
4
0.05
0.1
0.5
1
4
V
CE
(V)
I
C
(A)
I
C
(A)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
3
V
CE
(sat)-I
B
Characteristics (Typical)
3
I
C
-V
BE
Temperature Characteristics (Typical)
4
(I
C
/ I
B
=500)
(V
CE
=2V)
V
CE
(sat) (V)
V
CE
(sat) (V)
T
a
=1
2
25
°
C
75
°
C
25
°
C
3
2
I
C
=4A
I
C
=2A
I
C
(A)
C
0
°
–3
2
1
1
I
C
=1A
T
a
=
125
°
75
°
C
C
1
0
0.3
0.5
1
5
0
0.1
0.5
1
5
10
50
0
0
1
25
°C
–30°C
2
3
I
C
(A)
I
B
(mA)
V
BE
(V)
θ
j-a
-PW Characteristics
20
25
P
T
-T
a
Characteristics
10
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
W
Safe Operating Area (SOA)
5
1m
s
0
10
10
µ
s
20
θ
j–a (°C / W)
10
ms
ith
5
P
T
(W)
15
10
10
50
×
0
×
1
00
×
2
1
5
Without Heatsink
50
×
2
I
C
(A)
150
ini
Inf
te
He
ats
ink
1
0.5
0.1
Single Pulse
0.05
Without Heatsink
0.5
1
5
10
50 100
500 1000
0
–40
0
50
100
0.03
3
T
a
=25°C
5
10
50
100
200
PW (mS)
T
a
(°C)
V
CE
(V)
20

SMA4032相似产品对比

SMA4032 SMA4033 SLA4041 SLA4071
描述 Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA, 12 PIN Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA-12 Power Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SLA, 12 PIN Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 12 Pin, SIP-12
是否Rohs认证 不符合 不符合 不符合 不符合
包装说明 SMA, 12 PIN SMA-12 SLA, 12 PIN SIP-12
针数 12 12 12 12
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 3 A 2 A 3 A 5 A
集电极-发射极最大电压 100 V 100 V 200 V 100 V
配置 COMPLEX COMPLEX COMPLEX COMPLEX
最小直流电流增益 (hFE) 2000 2000 1000 2000
JESD-30 代码 R-PSIP-T12 R-PSIP-T12 R-PSFM-T12 R-PSFM-T12
JESD-609代码 e0 e0 e0 e0
元件数量 4 4 4 4
端子数量 12 12 12 12
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管元件材料 SILICON SILICON SILICON SILICON

 
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