The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 January 2006.
INCH-POUND
MIL-PRF-19500/117N
6 October 2005
SUPERSEDING
MIL-PRF-19500/117M
13 January 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH
1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1
THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided
for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for
each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and
as follows:
a. P
TL
= 500 mW, (DO-35) at T
L
= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175°C.
b. P
TEC
= 500 mW, (DO-213AA) at T
EC
= +125°C, derate to 0 at +175°C. -65°C
≤
T
J
≤
+175°C; -65°C
≤
T
STG
≤
+175°C.
c. P
T(PCB)
= 500 mW, T
A
= 75°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://assist.daps.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/117N
* 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in maximum and primary test
ratings (see 3.8) herein and as follows:
a. 11 V dc
≤
V
Z
≤
200 V dc.
b. 1N962B-1 through 1N992B-1 are 5 percent voltage tolerance.
c. 1N962C-1 through 1N992C-1 are 2 percent voltage tolerance.
d. 1N962D-1 through 1N992D-1 are 1 percent voltage tolerance.
Thermal resistance:
R
θ
JL
= 250°C/W maximum at L = .375 inch (9.53 mm) (DO-35).
R
θ
JEC
= 100°C/W maximum. Junction to end-caps (DO-213AA).
R
θ
JA(PCB)
= 300°C/W junction to ambient including PCB see note (1).
(1) See figures 4, 5, and 6 for derating curves. T
A
= +75°C for both axial and MELF (US) on printed circuit board
(PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (US) = .067 inch (1.70 mm) x
.105 inch (2.67 mm); pads (axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (7.62 mm) x 1 inch (25.4 mm)
long, axial lead length L
≤
.187 inch (≤ 4.76 mm); R
θJA(PCB)
with a defined thermal resistance condition
included is measured at IZ = as defined in the electrical characteristics tolerance table herein.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/117N
Symbol
Inches
BD
BL
LD
LL
LL1
Min
.055
.120
.018
1.000
Max
.090
.200
.022
1.500
.050
Dimensions
Millimeters
Min
1.40
3.05
0.46
25.40
Max
2.29
5.08
0.56
38.10
1.27
Notes
3
3
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within
this cylinder but shall not be subject to minimum limit of LD. The BL dimension shall include the
entire body including slugs (new note).
4. Within LL1 lead diameter may vary to allow for flash, lead finish build-up, and minor irregularities
other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φX
symbology.
FIGURE 1. Physical dimensions for types 1N962B-1 through 1N992B-1,
1N962C-1 through 1N992C-1, 1N962D-1 through 1N992 (DO-35).
3
MIL-PRF-19500/117N
Symbol
Inches
BL
BD
ECT
S
Min
.130
.063
.016
.001 min
Max
.146
.067
.022
Dimensions
Millimeters
Min
3.30
1.60
0.41
0.03 min
Max
3.70
1.70
0.55
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φX
symbology.
FIGURE 2. Physical dimensions for types 1N962BUR-1 through 1N992BUR-1,
1N962CUR-1 through 1N992CUR-1, 1N962DUR-1 through 1N992DUR-1 (DO-213AA).
4
MIL-PRF-19500/117N
Ltr
Dimensions
JANHCA
Inches
Millimeters
Min
Max
Min
Max
.021
.025
.53
.63
.013
.017
.33
.43
JANHCB
Inches
Millimeters
Min
Max
Min
Max
.024
.028
0.61
0.71
.017
.021
0.43
0.53
A
B
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics of the die thickness are .010
±.002
(0.25 mm). Metallization is top
= (anode)-AL, back: (cathode)-AU. AL thickness = 12,000 Å minimum for JANHCA and 40,000
Å minimum for JANHCB, AU thickness = 3,000 Å minimum for JANHCA, and 5,000 Å minimum
for JANHCA.
4. Circuit layout data: For zener operation, cathode must be operated positive with respect to
anode.
5. Requirements in accordance with appendix G of MIL-PRF-19500, are performed in a TO-5
package (see 6.5).
FIGURE 3. Physical dimensions (JANHCA and JANHCB die dimensions).
5
NXP MCU
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