ZXMP4A16G
40V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= -40V: R
DS(on)
= 0.060 : I
D
= -6.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
·
·
·
·
·
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
·
·
·
·
DC-DC Converters
Disconnect switches
Audio output stages
Motor Control
PINOUT
ORDERING INFORMATION
DEVICE
ZXMP4A16GTA
ZXMP4A16GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
Top View
DEVICE MARKING
·
ZXMP
4A16
ISSUE 4 - JULY 2003
1
SEMICONDUCTORS
ZXMP4A16G
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
GS
= -10V;
(V
GS
= -10V;
(V
GS
= -10V; T
A
=25°C)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C
Linear Derating Factor
(a)
(b)
SYMBOL
V
DSS
V
GS
T
A
=25°C)
(b)
T
A
=70°C)
(b)
(a)
I
D
LIMIT
-40
20
-6.4
-5.1
-4.6
-21
-5.2
-21
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
SYMBOL
R
θJA
R
θJA
VALUE
62.5
32.2
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 4 - JULY 2003
SEMICONDUCTORS
2
ZXMP4A16G
CHARACTERISTICS
ISSUE 4 - JULY 2003
3
SEMICONDUCTORS
ZXMP4A16G
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2)(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
V
SD
t
rr
Q
rr
-0.85
27.2
25.4
-1.2
V
ns
nC
T
J
=25 C, I
S
=-3.4A,
V
GS
=0V
T
J
=25 C, I
F
=-3A,
di/dt= 100A/ s
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
2.33
8.84
29.18
12.54
13.6
26.1
2.8
4.8
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-20V,V
GS
=-10V,
I
D
=-3.8A
V
DS
=-20V,V
GS
=-5V,
I
D
=-3.8A
V
DD
=-20V, I
D
=-1A
R
G
6 .0
,
V
GS
=-10V
C
iss
C
oss
C
rss
1007
130
85
pF
pF
pF
V
DS
=-20V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
8.85
-1.0
0.060
0.100
S
-40
-1
100
V
A
nA
V
I
D
=-250µA, V
GS
=0V
V
DS
=-40V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
V
GS
=-10V, I
D
=-3.8A
V
GS
=-4.5V, I
D
=-2.9A
V
DS
=-15V,I
D
=-3.8A
NOTES
(1) Measured under pulsed conditions. Width 300µs. Duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SEMICONDUCTORS
4
(
ISSUE 4 - JULY 2003
ZXMP4A16G
TYPICAL CHARACTERISTICS
ISSUE 4 - JULY 2003
5
SEMICONDUCTORS
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