ZXMC3AM832
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
(BR)DSS
= 30V; R
DS(ON)
= 0.12 ; I
D
= 3.7A
P-Channel V
(BR)DSS
= -30V; R
DS(ON)
= 0.21 ; I
D
= -2.7A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
3mm x 2mm Dual Die MLP
FEATURES
•
Low on - resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
3mm x 2mm MLP
APPLICATIONS
•
MOSFET gate drive
•
LCD backlight inverters
•
Motor control
D2
PINOUT
5
D2
6
D1
7
D1
8
ORDERING INFORMATION
DEVICE
ZXMC3AM832TA
ZXMC3AM832TC
REEL
7
’‘
13’‘
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
G2
S2
G1
S1
4
3
2
1
3 x 2 Dual MLP
DEVICE MARKING
C01
underside view
PROVISIONAL ISSUE E - JULY 2004
1
ZXMC3AM832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(f)
@V
GS
=10V; T
A
=25 C
(b)(f)
@V
GS
=10V; T
A
=25 C
(a)(f)
Pulsed Drain Current
Continuous Source Current (Body Diode)
(b)(f)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25°C
Linear Derating Factor
(a)(f)
SYMBOL
V
DSS
V
GS
I
D
N-Channel
30
20
3.7
3.0
2.9
12.4
2.4
12.4
P-Channel
-30
20
-2.7
-2.2
-2.1
-9.2
-2.8
-9.2
UNIT
V
V
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
I
DM
I
S
I
SM
P
D
P
D
P
D
P
D
P
D
1.5
12
2.45
19.6
1
8
1.13
8
1.7
13.6
Power Dissipation at TA=25°C
(b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)(g)
Linear Derating Factor
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)(f)
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
(b)(f)
(c)(f)
(d)(f)
(d)(g)
SYMBOL
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
VALUE
83.3
51
125
111
73.5
41.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
(e)(g)
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PROVISIONAL ISSUE E - JULY 2004
2
ZXMC3AM832
TYPICAL CHARACTERISTICS
-I
D
Drain Current (A)
10
Limited
R
DS(ON)
I
D
Drain Current (A)
DS(ON)
10
Limited
R
1
DC 1s
100ms
Note (a)(f)
10ms
1ms 100us
1
DC 1s
100ms
10ms
Note (a)(f)
1ms
100us
100m
100m
10m
Single Pulse, T
amb
=25°C
10m
Single Pulse, T
amb
=25°C
1
10
1
10
N-channel Safe Operating Area
3.5
V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
P-channel Safe Operating Area
Max Power Dissipation (W)
2oz Cu
Note (e)(g)
2oz Cu
Note (a)(f)
1oz Cu
Note (d)(g)
Thermal Resistance (°C/W)
80
60
Note (a)(f)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1oz Cu
Note (d)(f)
D=0.5
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
3.5
3.0
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
Thermal Resistance (°C/W)
P
D
Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0.0
0.1
T
amb
=25°C
T
j max
=150°C
Continuous
2oz copper
Note (f)
2oz copper
Note (g)
1oz copper
Note (f)
1oz copper
Note (g)
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (g)
1
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
PROVISIONAL ISSUE E - JULY 2004
3
ZXMC3AM832
N-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
30
0.5
100
1
0.106
3.5
0.12
0.18
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2.0A
V
DS
=4.5V,I
D
=2.5A
C
iss
C
oss
C
rss
190
38
20
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
1.7
2.3
6.6
2.9
2.3
3.9
0.6
0.9
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V,V
GS
=10V,
I
D
=2.5A
V
DS
=15V,V
GS
=5V,
I
D
=2.5A
V
DD
=15V, I
D
=2.5A
R
G
=6.0Ω, V
GS
=10V
V
SD
t
rr
Q
rr
0.85
17.7
13.0
0.95
V
ns
nC
T
J
=25°C, I
S
=1.7A,
V
GS
=0V
T
J
=25°C, I
F
=2.5A,
di/dt= 100A/µs
PROVISIONAL ISSUE E - JULY 2004
4
ZXMC3AM832
P-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
-30
1
100
-0.8
0.210
0.330
2.48
V
A
nA
V
Ω
Ω
S
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
V
GS
=-10V, I
D
=-1.4A
V
GS
=-4.5V, I
D
=-1.1A
V
DS
=-15V,I
D
=-1.4A
C
iss
C
oss
C
rss
204
39.8
25.8
pF
pF
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
1.5
2.8
11.3
7.5
2.58
5.15
0.65
0.92
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-1.4A
V
DS
=-15V,V
GS
=-5V,
I
D
=-1.4A
V
DD
=-15V, I
D
=-1A
R
G
=6.0Ω, V
GS
=-10V
V
SD
t
rr
Q
rr
-0.85
18.6
14.8
-0.95
V
ns
nC
T
J
=25°C, I
S
=-1.1A,
V
GS
=0V
T
J
=25°C, I
F
=-0.95A,
di/dt= 100A/µs
PROVISIONAL ISSUE E - JULY 2004
5
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