P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=20Ω
ZVP3310A
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-100
-140
-1.2
±
20
UNIT
V
mA
A
V
mW
°C
625
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
-300
20
50
50
15
5
8
8
8
8
-100
-1.5
-3.5
20
-1
-50
MAX. UNIT CONDITIONS.
V
V
nA
µ
A
µ
A
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125°C
(2)
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V,I
D
=-150mA
V
DS
=-25V,I
D
=-150mA
mA
Ω
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25V, V
GS
=0V, f=1MHz
V
DD
≈
-25V, I
D
=-150mA
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test.
3-432
Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
(
3
)
ZVP3310A
TYPICAL CHARACTERISTICS
V
GS=
-20V
-16V
-12V
V
GS=
-20V
-16V
-14V
-12V
-10V
-9V
-8V
-7V
-0.2
-6V
-5V
0
-2
-4
-6
-8
-4V
-10
I
D
- Drain Current (Amps)
-0.6
-0.6
-9V
-0.4
-8V
-7V
-6V
I
D
- Drain Current (Amps)
-10V
-0.4
-0.2
-5V
-4.5V
-4V
-3.5V
0
-10
-20
-30
-40
-50
0
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
-10
V
DS-
Drain Source
Voltage (Volts)
I
D
- Drain Current (Amps)
-0.6
-8
-6
I
D=
-0.3A
-0.15A
-0.075A
0
0
-2
-4
-6
-8
-10
-0.4
V
DS=
-10V
-4
-0.2
-2
0
0
-2
-4
-6
-8
-10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
R
DS(on)
-Drain Source On Resistance
(Ω)
-6V -7V -8V -10V
Transfer Characteristics
V
GS
=-4V
100
-5V
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40 -20
0
D
eR
nc
ta
sis
V
GS=
-10V
I
D=
-150mA
)
on
S(
50
-20V
V
GS=
V
DS
Dr
I
D=
-1mA
Gate Thresh
old Voltage
V
GS(TH)
20 40 60 80 100 120 140 160 180
Re
ce
ur
o
-S
ain
10
-10
-100
-1000
I
D-
Drain Current
(mA)
T
j
-Junction Temperature (°C)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
v Temperature
3-433
ZVP3310A
TYPICAL CHARACTERISTICS
100
100
g
fs
-Transconductance (mS)
90
80
70
60
50
40
30
20
10
0
0
-0.1
-0.2
-0.3 -0.4
-0.5
-0.6
-0.7
-0.8
V
DS=
-10V
g
fs
-Transconductance (mS)
90
80
70
60
50
40
30
20
10
0
0 -1
-2
-3
-4
-5
-6
-7
-8
-9
-10
V
DS=
-10V
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
50
40
30
20
10
0
0
-10
-20
-30
-40
-50
-60
V
GS=
0V
f
=1MHz
V
GS
-Gate Source Voltage (Volts)
0
-2
-4
-6
-8
-10
-12
-14
-16
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
DS
=
-25V
-50V
-100V
I
D=-
0.2A
C-Capacitance (pF)
C
iss
C
oss
C
rss
-70
-80
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-434
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
