ZXMN3A01F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 30V; R
DS(ON)
= 0.12
I
D
= 2.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
SOT23
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN3A01FTA
ZXMN3A01FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
7N3
Top View
ISSUE 2 - JULY 2002
1
ZXMN3A01F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
GS
=10V; T
A
=25°C (b)
V
GS
=10V; T
A
=70°C (b)
V
GS
=10V; T
A
=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
30
20
2.0
1.6
1.8
8
1.3
8
625
5
806
6.4
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 2 - JULY 2002
2
ZXMN3A01F
CHARACTERISTICS
Max Power Dissipation (W)
10
0.7
R
DS(on)
Limited
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
I
D
Drain Current (A)
1
DC
1s
100ms
10ms
T
amb
=25°C
1ms
100µs
100m
10m
Single Pulse
100m
1
10
V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
200
150
D=0.5
T
amb
=25°C
Derating Curve
Single Pulse
T
amb
=25°C
Thermal Resistance (°C/W)
MaximumPower (W)
1k
10
100
Single Pulse
50
D=0.2
D=0.05
D=0.1
1
100µ 1m
10m 100m
1
10
100
1k
0
100µ 1m
10m 100m
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JULY 2002
3
ZXMN3A01F
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
1
0.106
3.5
0.12
0.18
30
0.5
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =250µA, V
DS
= V
GS
SYMBOL
MIN.
TYP. MAX. UNIT CONDITIONS.
D
Static Drain-Source On-State Resistance R
DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2.0A
V
DS
=4.5V,I
D
=2.5A
g
fs
C
iss
C
oss
C
rss
190
38
20
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
1.7
2.3
6.6
2.9
2.3
3.9
0.6
0.9
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V,V
GS
=10V,
I
D
=2.5A
V
DS
=15V,V
GS
=5V,
I
D
=2.5A
V
DD
=15V, I
D
=2.5A
R
G
(
6.0Ω, V
GS
=10V
V
SD
t
rr
Q
rr
0.85
17.7
13.0
0.95
V
ns
nC
T
J
=25°C, I
S
=1.7A,
V
GS
=0V
T
J
=25°C, I
F
=2.5A,
di/dt= 100A/µs
ISSUE 2 - JULY 2002
4
ZXMN3A01F
TYPICAL CHARACTERISTICS
I
D
Drain Current (A)
4V
3.5V
I
D
Drain Current (A)
10
T = 25°C
10V
7V
5V
4.5V
T = 150°C
10V
7V
5V
4.5V
4V
3.5V
3V
2.5V
V
GS
10
1
V
GS
3V
1
0.1
0.1
1
10
2.5V
0.1
2V
V
DS
Drain-Source Voltage (V)
0.1
Output Characteristics
V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
V
GS
= 10V
I
D
= 2.5A
10
1.6
Normalised R
DS(on)
and V
GS(th)
I
D
Drain Current (A)
V
DS
= 10V
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
R
DS(on)
T = 150°C
1
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
T = 25°C
0.1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
50
100
150
Typical Transfer Characteristics
2.5V
V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
I
SD
Reverse Drain Current (A)
3V
3.5V
4V
V
GS
4.5V
5V
7V
R
DS(on)
Drain-Source On-Resistance
ISSUE 2 - JULY 2002
5
9
10
T = 150°C
1
1
T = 25°C
0.1
10V
T = 25°C
0.1
0.4
0.6
0.8
1.0
1.2
0.1
I
D
Drain Current (A)
1
10
On-Resistance v Drain Current
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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