epitex
SMT850N
Opto-Device & Custom LED
TOP IR LED SMT850N
Lead ( Pb ) Free Product – RoHS Compliant
High Performance TOP IR LED
SMT850N consists of an AlGaAs LED mounted on the lead frame as TOP LED package. It
emits a spectral band of radiation at 850nm.
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) Package Resin
(3) Lens
Outer
dimension (Unit: mm)
TOP IR LED
SMT850N
AlGaAs
400um *400um
850nm typ.
Silver Plated
PA6T
Epoxy resin
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Maximum Rated Value
Unit
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Soldering Temperature
P
D
I
F
I
FP
V
R
R
thja
T
j
T
OPR
T
STG
T
SOL
160
100
1000
5
80
120
-40 ~ +100
-40 ~ +100
250
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
epitex
Opto-Device & Custom LED
TOP IR LED SMT850N
Lead ( Pb ) Free Product – RoHS Compliant
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol
Condition
Forward Voltage
Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
V
F
V
FP
P
O
I
E
P
tr
tf
I
F
=50mA
I
FP
=1A
I
F
=50mA
I
FP
=1A
I
F
=50mA
I
FP
=1A
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
Minimum
Typical
1.45
3.1
Maximum
1.6
Unit
V
mW
mW/sr
16
22
350
12
190
840
850
40
±62
15
10
860
nm
nm
deg.
ns
ns
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by CIE127-2007 Condition B.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
epitex
Opto-Device & Custom LED
TOP IR LED SMT850N
Lead ( Pb ) Free Product – RoHS Compliant
Forward Curent - Forward Voltage
100
Relative Radiant Intensity -
Forward Current
(ta=25°C, tw=10s, Duty=1%)
(ta=25°C, tw=10s, Duty=1%)
Relative Radiant Intensity (A.U.)
1000
50mA Standard
10
Forward Current (mA)
100
1
10
0.1
1
0.0
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
4
6 8
2
4
6 8
2
4
6 8
1
10
100
1000
Forward Voltage (V)
Forward Current (mA)
Forward Current - Pulse Duration
2
Allowable Forward Current -
Ambient Temperature
110
Rthja=80K/W
1000
Forward Current Ifp [mA]
8
7
6
5
4
3
2
Allowable Forward Current(mA)
4
100
90
80
70
60
50
40
30
20
10
0
100
8
7
6
5
4
3
10kHz
100Hz
1kHz
10
-3
10
10
-2
10
-1
10
0
10
1
10
2
10
3
1Hz
2
10Hz
10
0
20
40
60
80
100
Duration tw [ms]
Ambient Temperature (°C)
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
epitex
1.9
Opto-Device & Custom LED
TOP IR LED SMT850N
Lead ( Pb ) Free Product – RoHS Compliant
Forward Voltage -
Ambient Temperture
10
Relative Radiant Intensity -
Ambient Temperature
Relative Radiant Intensity (A.U.)
9
8
7
6
5
4
3
If=50mA
1.8
1.7
If=50mA
Forward Voltage (V)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
20
40
60
80
100
2
1
9
8
7
6
5
4
3
2
0.1
0
20
40
60
80
100
Ambient Temperatture (°C)
Ambient Temperature (°C)
Peak Wavelength -
Ambient Temperature
900
If=50mA
890
880
870
860
850
840
830
820
810
800
0
20
40
60
80
100
Peak Wavelength (nm)
Ambient Temperature (°C)
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
epitex
1.0
Opto-Device & Custom LED
TOP IR LED SMT850N
Lead ( Pb ) Free Product – RoHS Compliant
Relative Spectral Emission
1.0
Radiation Characteristics
±62
(ta=25°C)
Relative Radiant Intensity (A.U.)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
750
Relative Radiant Intensity (A.U.)
800
850
900
950
0.9
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
-90
-60
-30
0
30
60
90
Wavelength (nm)
Angle (deg.)
Radiation Characteristics
-20
-30
-40
-10
0
10
20
30
40
±62
50
60
70
80
Angle (deg.)
-50
-60
-70
-80
-90
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
90
Relative Radiant Intensity (A.U.)
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
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