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MBR2070CT

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 70V V(RRM), Silicon, TO-220AB,
产品类别分立半导体    二极管   
文件大小157KB,共2页
制造商Galaxy Microelectronics
标准
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MBR2070CT概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 70V V(RRM), Silicon, TO-220AB,

MBR2070CT规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PSFM-T3
Reach Compliance Codeunknown
其他特性FREE WHEELING DIODE
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.95 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流150 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压70 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
Base Number Matches1

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BL
GALAXY ELECTRICAL
DUAL
SCHOTTKY RECTIFIERS
FEATURES
High surge capacity.
For use in low voltage, high frequency inverters, free
111
wheeling, and polarity protection applications.
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MBR2070CT - - - MBR20100CT
VOLTAGE RANGE:
70
-
100
V
CURRENT: 20 A
TO-220AB
MECHANICAL DATA
Case:JEDEC TO-220AB,molded plastic body
Terminals:Leads, solderable per MIL-STD-750,
11
Method 2026
Polarity: As marked
Weight: 0.08 ounce, 2.24 grams
Position: Any
½½
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
MBR2070CT MBR2080CT MBR2090CT MBR20100CT UNITS
Maximum recurrent peak reverse voltage
Maximum w orking peak reverse voltage
Maximum DC blocking voltage
Maximum average forw ard total device1
111rectified
current
@ T
C
= 133
Peak forw ard surge current 8.3 ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage per leg
(NOTE 1)
(I
F
=10A,T
C
=25 )
(I
F
=10A,T
C
=125 )
(I
F
=20A,T
C
=25 )
(I
F
=20A,T
C
=125 )
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
70
49
70
80
56
80
20.0
90
63
90
100
70
100
V
V
V
A
150.0
0.85
A
V
F
0.70
0.95
0.85
V
I
R
C
T
T
J
T
STG
0.1
6.0
400
-
55
---- + 150
-
55
---- + 175
mA
pF
Maximum junction capacitance
(NOTE2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2.
V
R
=5V
DC
,(test signal range 100KHz to 1MHz
www.galaxycn.com
Document Number 0267014
BL
GALAXY ELECTRICAL
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