MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MUR490E/D
SWITCHMODE
™
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
•
20 mJ Avalanche Energy Guaranteed
•
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
•
Ultrafast 75 Nanosecond Recovery Time
•
175°C Operating Junction Temperature
•
Low Forward Voltage
•
Low Leakage Current
•
High Temperature Glass Passivated Junction
•
Reverse Voltage to 1000 Volts
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.1 gram (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering
Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
•
Shipped in plastic bags, 5,000 per bag
•
Available Tape and Reeled, 1500 per reel, by adding a “RL’’
suffix to the part number
•
Polarity: Cathode indicated by Polarity Band
•
Marking: U490E, U4100E
MUR490E
MUR4100E
MUR4100E is a
Motorola Preferred Device
ULTRAFAST
RECTIFIERS
4.0 AMPERES
900–1000 VOLTS
CASE 267–03
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 1)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, Tstg
MUR490E
900
MUR4100E
1000
Unit
Volts
4.0 @ TA = 35°C
70
Amps
Amps
°C
*
65 to +175
See Note 1
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
v
2.0%.
R
θJC
°C/W
SWITCHMODE is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Rev 2
©
Rectifier
Inc. 1996
Data
Motorola,
Device
1
MUR490E MUR4100E
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 3.0 Amps, TJ = 150°C)
(iF = 3.0 Amps, TJ = 25°C)
(iF = 4.0 Amps, TJ = 25°C)
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/µs)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)
Maximum Forward Recovery Time
(IF = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V)
Controlled Avalanche Energy (See Test Circuit in Figure 6)
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
vF
1.53
1.75
1.85
iR
900
25
trr
100
75
tfr
WAVAL
75
20
ns
mJ
ns
µA
Volts
v
2.0%.
2
Rectifier Device Data
MUR490E MUR4100E
MUR490E, MUR4100E
20
IR, REVERSE CURRENT (
m
A)
1000
400
200
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0.004
0.002
0.001
TJ = 175°C
100°C
TJ = 175°C
10
100°C
7.0
5.0
25°C
25°C
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
3.0
2.0
*The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from these
same curves if VR is sufficiently below rated VR.
0
100
200
300
400
500
600
700
800
900 1000
1.0
0.7
0.5
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
0.3
0.2
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
8.0
Rated VR
R
q
JA = 28°C/W
0.1
0.07
0.05
6.0
4.0
SQUARE WAVE
2.0
0
0
50
dc
0.03
0.02
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
100
150
200
250
vF, INSTANTANEOUS VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Typical Forward Voltage
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
SQUAREWAVE
(Capacitive IPK =20
IAV
Load)
10
dc
TJ = 175°C
5.0
C, CAPACITANCE (pF)
70
60
50
40
TJ = 25°C
30
20
10
9.0
8.0
7.0
0
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
Rectifier Device Data
3
MUR490E MUR4100E
+VDD
IL
40
m
H COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
t0
t1
t2
VDD
t
Figure 6. Test Circuit
Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A mercury
switch was used instead of an electronic switch to simulate a
noisy environment when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch is
opened and the voltage across the diode under test begins to
rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1 is
opened; and calculating the energy that is transferred to the
diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite com-
ponent resistances. Assuming the component resistive ele-
ments are small Equation (1) approximates the total energy
transferred to the diode. It can be seen from this equation
that if the VDD voltage is low compared to the breakdown
voltage of the device, the amount of energy contributed by
the supply during breakdown is small and the total energy
can be assumed to be nearly equal to the energy stored in
the coil during the time when S1 was closed, Equation (2).
The oscilloscope picture in Figure 8, shows the information
obtained for the MUR8100E (similar die construction as the
MUR4100E Series) in this test circuit conducting a peak cur-
rent of one ampere at a breakdown voltage of 1300 volts,
and using Equation (2) the energy absorbed by the
MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this condi-
tion, the new “E’’ series provides added protection against
those unforeseen transient viruses that can produce unex-
plained random failures in unfriendly environments.
EQUATION (1):
W
AVAL
[
1 LI 2
2 LPK
BV
DUT
BV
–V
DUT DD
CH1
CH2
500V
50mV
A
20
m
s
953 V
VERT
CHANNEL 2:
IL
0.5 AMPS/DIV.
EQUATION (2):
W
AVAL
CHANNEL 1:
VDUT
500 VOLTS/DIV.
[
1 LI 2
2 LPK
1
CH1
ACQUISITIONS
SAVEREF SOURCE
CH2
217:33 HRS
STACK
REF
REF
TIME BASE:
20
m
s/DIV.
Figure 8. Current–Voltage Waveforms
4
Rectifier Device Data
MUR490E MUR4100E
NOTE 1 — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction–to–ambient
(R
θJA
) for the mountings shown is to be used as typical
guideline values for preliminary engineering or in case the tie
point temperature cannot be measured.
TYPICAL VALUES FOR R
θJA
IN STILL AIR
Mounting
Method
1
2
R
θJA
3
Lead Length, L (IN)
1/8
1/4
1/2
3/4
50
51
53
55
58
59
61
63
28
Units
°C/W
°C/W
°C/W
MOUNTING METHOD 1
P.C. Board Where Available Copper
Surface area is small.
L
L
Rectifier Device Data
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 2
Vector Push–In Terminals T–28
L
L
MOUNTING METHOD 3
P.C. Board with
1–1/2
″
x 1–1/2
″
Copper Surface
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
L = 1/2
″
Board Ground Plane
5
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