MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MW4IC001MR4/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifier
The MW4IC001MR4 wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Motorola’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2200 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W - CDMA.
•
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
•
High Gain, High Efficiency and High Linearity
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case @ 85°C
Symbol
R
θJC
Value
65
- 0.5, +15
4.58
0.037
- 65 to +150
150
Unit
Vdc
Vdc
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Value (1)
27.3
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
MW4IC001MR4
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50
µA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 10 mA)
Drain - Source On - Voltage
(V
GS
= 10 V, I
D
= 0.05 A)
Forward Transconductance
(V
DS
= 10 V, I
D
= 0.1 A)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two - Tone Common Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Output Power, 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ
= 12 mA, f = 2170 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
G
ps
—
13
—
dB
C
oss
C
rss
—
—
45
0.62
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2
—
—
3
3.7
0.48
0.05
5
5
0.9
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
10
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
η
D
—
29
—
%
IMD
—
- 28
—
dBc
IRL
—
- 18
—
dB
P1dB
G
ps
η
D
IRL
—
12
35
- 10
0.85
13
38
- 16
—
—
—
—
W
dB
%
dB
MW4IC001MR4
2
MOTOROLA RF DEVICE DATA
V
GG
C1
C2
Z6
C7
Z7
R1
RF
INPUT
DUT
Z1
C9
C3
C10
Z2
L1
C4
Z3
Z4
R2
Z5
Z8
L2
Z9
Z10
Z11
C5
C11
Z12
Z13
C13
RF
OUTPUT
C6
V
DD
+
C8
C12
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
1.331″
0.126″
0.065″
0.065″
0.680″
1.915″
0.120″
x 0.044″
x 0.076″
x 0.175″
x 0.195″
x 0.145″
x 0.055″
x 0.141″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
PCB
0.062″ x 0.044″ to 0.615″ Taper
0.082″ x 0.615″ Microstrip
0.075″ x 0.044″ Microstrip
0.625″ x 0.044″ Microstrip
1.375″ x 0.044″ Microstrip
Rogers RO4350, 0.020″,
ε
r
= 3.5
Figure 1. MW4IC001MR4 900 MHz Test Circuit Schematic
Table 1. MW4IC001MR4 900 MHz Test Circuit Component Designations and Values
Part
C1, C6
C2, C3, C5, C7
C4
C8
C9
C10, C11
C12
C13
L1
L2
R1
R2
Description
0.1
µF,
100 V Chip Capacitors
43 pF, 500 V Chip Capacitors
12 pF, 500 V Chip Capacitor
22
µF,
35 V Tantalum Chip Capacitor
4.7 pF, 500 V Chip Capacitor
0.6 - 4.5 pF, 500 V Variable Capacitors
2.7 pF, 500 V Chip Capacitor
3.3 pF, 500 V Chip Capacitor
5.6 nH Chip Inductor
10 nH Chip Inductor
100
W
Chip Resistor
20
W
Chip Resistor
Part Number
C1210C104K5RACTR
100B430JP500X
100B120JP500X
T491X226K035AS
100B4R7CP500X
27271SL
100B2R7CP500X
100B3R3CP500X
0805 Series
1008 Series
CRCW12061001F100
CRCW120620R0F100
Manufacturer
Kemet
ATC
ATC
Kemet
ATC
Johanson
ATC
ATC
AVX
ATC
Dale
Dale
MOTOROLA RF DEVICE DATA
MW4IC001MR4
3
VGG
C1
C2
V DD
C8
C6
C7
C9
C10
C3
R1
C4
L1
R2
L2
C5
C12
C11
C13
MW4IC001MR4
900 MHz
Rev 2
Figure 2. MW4IC001MR4 900 MHz Test Circuit Component Layout
MW4IC001MR4
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS - 900 MHz
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IRL
46
42
38
34
30
26
22
18
14
10
855
IM3
G
ps
V
DS
= 28 Vdc
P
out
= 0.9 W (PEP)
I
DQ
= 14 mA
Two −Tone Measurement
100 kHz Tone Spacing
η
D
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
50
−15
−17
−19
−21
−23
−25
−27
−29
−31
−33
865
870
875
880
885
890
895
900
−35
905
860
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
0
0.2
0.4
0.6
0.8
1.0
V
DS
= 28 Vdc
I
DQ
= 14 mA
f = 880 MHz
P1dB
G
ps
IMD, INTERMODULATION DISTORTION (dBc)
η
D
60
55
50
45
40
35
30
25
20
η
D
, DRAIN EFFICIENCY (%)
−25
−30
I
DQ
= 8 mA
−35
10 mA
−40
−45
−50
−55
0.01
0.1
18 mA
16 mA
14 mA
Two −Tone Measurement
100 kHz Tone Spacing
12 mA
1
10
V
DS
= 28 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
1.2
15
1.4
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. CW Performance versus Output
Power
Figure 5. Intermodulation Distortion versus
Output Power
−25
IMD, INTERMODULATION DISTORTION (dBc)
−30
−35
−40
−45
−50
−55
−60
−65
7th Order
−70
0.01
0.1
1
10
P
out
, OUTPUT POWER (WATTS) PEP
5th Order
Two −Tone Measurement
100 kHz Tone Spacing
3rd Order
V
DS
= 28 Vdc
I
DQ
= 14 mA
f1 = 880 MHz
f2 = 880.1 MHz
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
10 MHz
−45
1 MHz
Tone
Spacing = 100 kHz
0.1
V
DS
= 28 Vdc
I
DQ
= 14 mA
f1 = 880 MHz,
f2 = f1 + Tone Spacing
Two −Tone Measurement
1
10
−50
0.01
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Third Order Intermodulation
Distortion versus Output Power
MOTOROLA RF DEVICE DATA
MW4IC001MR4
5
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