SML50EUZ12LC
Enhanced Ultrafast
Recovery Diode
1200 Volt, 2 X 50 Amp
SML
50EUZ12LC
Back of Case Cathode
TECHNOLOGY
The planar passivated and enhanced ultrafast recovery
diode features a triple charge control action utilising
Semelab’s Graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
1 - Anode 1
2 - Com. Cathode
3 - Anode 2
BENEFITS
• Very fast recovery for low switching losses
• Ultra soft recovery with low EMI generation
See Package outline for mechanical data and more details
• High dynamic ruggedness under all conditions
• Low temperature dependency
• Low on-state losses with positive temperature coefficient
• Stable blocking voltage and low leakage current
1
2
3
• Avalanche rated for high reliability circuit operation
TO-264 Package
Key Parameters
V
R
V
F
I
F
t
rr
(max)
(typ)
(max)
(max)
1200V
3.0V
2 x 50A
50nS
APPLICATIONS
• Freewheeling Diode for IGBTs and MOSFETs
• Uninterruptible Power Supplies UPS
• Switch Mode Power Supplies SMPS
• Inverse and Clamping Diode
• Snubber Diode
• Fast Switching Rectification
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25°C unless otherwise stated)
V
RRM
V
R
I
FAV
I
FSM(surge)
I
FS(surge)
P
D
W
AVL
T
J
,T
STG
Peak Repetitive Reverse Voltage
DC Reverse Blocking Voltage
Average Forward Current @Tc = 85°C
Repetitive Forward Current
Non-Repetitive Forward Current(10msec pulse)
Power Dissipation @Tc = 85°C
Avalanche Energy(L=40mH)
Operating & Storage Junction Temperature
1200V
1200V
50A
125A
500A
155W
40mJ
- 55 to 150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2410
Issue 1
SML50EUZ12LC
ELECTRICAL CHARACTERISTICS
Parameter
STATIC ELECTRICAL CHARACTERISTIC
I
F
= 50A
V
F
Forward Voltage Drop
I
F
= 50A
I
F
= 25A
I
R
C
T
Q
rr
I
rr
t
rr
Q
rr
I
rr
t
rr
t
rr
Leakage Current
Junction Capacitance
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Time
V
R
= 1200V
V
R
= 1200V
V
R
= 200V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
2.25
1.5
1
46
1.37
42
65
2.66
63
85
50
1000
5
µA
mA
pF
µC
A
nsec
µC
A
nsec
nsec
3
3.5
3.7
V
(Tcase = 25°C unless otherwise stated)
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC ELECTRICAL CHARACTERISTIC
V
R
=
600V
I
F
= 50A
d
i
/ d
t
=
1000A/µs T
J
= 25°C
V
R
=
600 V
I
F
= 50A
d
i
/ d
t
=
1000A/µs T
J
= 125°C
V
R
=
50V
d
i
/ d
t
=
100A/µs
I
F
= 1A
T
J
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
R
θjc
Junction to Case Thermal Resistance
TL
LS
Torque
Lead Temperature
Stray Inductance
Mounting Torque
10
0.6
300
1.1
°C/W
°C
nH
N.m
TO-264 Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79(.228)
6.20(.244)
Cathode
25.48 (1.003)
26.49 (1.043)
1
2
3
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76(.030)
1.30(.051)
2.29(.090)
2.69(.106)
1 - Anode 1
2 - Com. Cathode
3 - Anode 2
5.54(.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2410
Issue 1
PCB设计
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