MKP1V120 Series
Sidac High Voltage
Bidirectional Triggers
Bi–directional devices designed for direct interface with the ac
power line. Upon reaching the breakover voltage in each direction, the
device switches from a blocking state to a low voltage on–state.
Conduction will continue like a Triac until the main terminal current
drops below the holding current. The plastic axial lead package
provides high pulse current capability at low cost. Glass passivation
insures reliable operation. Applications are:
•
High Pressure Sodium Vapor Lighting
•
Strobes and Flashers
•
Ignitors
•
High Voltage Regulators
•
Pulse Generators
•
Used to Trigger Gates of SCR’s and Triacs
•
Indicates UL Registered — File #E116110
•
Device Marking: Logo, Device Type, e.g., MKP1V120, Date Code
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Preferred Device
SIDACS ( )
0.9 AMPERES RMS
120 thru 240 VOLTS
MT1
MT2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage
(Sine Wave, 50 to 60 Hz,
TJ = – 40 to 125°C)
MKP1V120, MKP1V130, MKP1V160
MKP1V240
On-State Current RMS
(TL = 80°C, Lead Length = 3/8″,
All Conduction Angles)
Peak Non–repetitive Surge Current
(60 Hz One Cycle Sine Wave,
TJ = 125°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM,
VRRM
Value
Unit
Volts
IT(RMS)
"
90
"
180
"
0.9
"
4.0
– 40 to
+125
– 40 to
+150
Amp
DO–41
PLASTIC AXIAL
(No Polarity)
CASE 059A
ITSM
Amps
ORDERING INFORMATION
Device
Package
DO41
DO41
DO41
DO41
DO41
DO41
Shipping
Tape and Reel 5K/Reel
Tape and Reel 5K/Reel
Bulk 1K/Bag
Tape and Reel 5K/Reel
Bulk 1K/Bag
Tape and Reel 5K/Reel
TJ
Tstg
°C
°C
MKP1V120RL
MKP1V130RL
MKP1V160
MKP1V160RL
MKP1V240
MKP1V240RL
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2000
607
May, 2000 – Rev. 5
Publication Order Number:
MKP1V120/D
MKP1V120 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Lead
Lead Length = 3/8″
Lead Solder Temperature
(Lead Length
1/16″ from Case, 10 s Max)
Symbol
R
θJL
TL
Max
40
260
Unit
°C/W
°C
w
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Repetitive Peak Off–State Current
TJ = 25°C
(50 to 60 Hz Sine Wave)
VDRM = 90 V, MKP1V120, MKP1V130 and MKP1V160
VDRM = 180 V, MKP1V240
IDRM
—
—
5.0
µA
ON CHARACTERISTICS
Breakover Voltage
IBO = 35
µA
35
µA
200
µA
35
µA
VBO
MKP1V120
MKP1V130
MKP1V160
MKP1V240
VTM
IH
RS
110
120
150
220
—
—
0.1
—
—
130
140
170
250
1.5
100
—
Volts
mA
kΩ
Volts
Peak On–State Voltage
(ITM = 1 A Peak, Pulse Width
≤
300
µs,
Duty Cycle
≤
2%)
Dynamic Holding Current
(Sine Wave, 50 to 60 Hz, RL = 100 Ohm)
Switching Resistance
(Sine Wave, 50 to 60 Hz)
1.3
—
—
DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of On–State Current,
Critical Damped Waveform Circuit
(IPK = 130 Amps, Pulse Width = 10
µsec)
di/dt
—
120
—
A/µs
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608
MKP1V120 Series
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
ITM
IH
IS
IDRM
VS
I(BO)
+ Voltage
V(BO)
– V
S
)
VTM
Slope = RS
Symbol
IDRM
VDRM
VBO
IBO
IH
VTM
ITM
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
VDRM
R
S
+
(V
(I
(BO)
S
– I
(BO)
)
TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (
°
C)
140
3/8
″
3/8
″
IT(RMS) , ON–STATE CURRENT (AMPS)
130
120
110
100
90
80
70
60
50
40
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
TJ = 125°C
Sine Wave
Conduction Angle = 180°C
TL
1.0
TJ = 125°C
Sine Wave
Conduction Angle = 180°C
Assembled in PCB
Lead Length = 3/8
″
0.8
0.6
0.4
0.2
0
20
40
60
80
100
120
140
IT(RMS), ON–STATE CURRENT (AMPS)
TA, MAXIMUM AMBIENT TEMPERATURE (°C)
Figure 1. Maximum Lead Temperature
I T , INSTANTANEOUS ON–STATE CURRENT (AMPS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
1.0
2.0
3.0
4.0
5.0
0
TJ = 25°C
125°C
1.25
PRMS , POWER DISSIPATION (WATTS)
Figure 2. Maximum Ambient Temperature
1.00
TJ = 25°C
Conduction Angle = 180°C
0.75
0.50
0.25
0.2
0.4
0.6
0.8
1.0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
IT(RMS), ON–STATE CURRENT (AMPS)
Figure 3. Typical On–State Voltage
Figure 4. Typical Power Dissipation
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609
MKP1V120 Series
THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
Z
q
JL(t) = R
q
JL
•
r(t)
D
TJL = Ppk R
q
JL[r(t)]
tp
TIME
where:
D
TJL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(tp) = normalized value of transient resistance at time tp.
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady–state conditions are achieved.
Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL +
D
TJL
500
1.0 k
2.0 k
5.0 k
10 k
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
VBO , BREAKOVER VOLTAGE (NORMALIZED)
1.4
IH , HOLDING CURRENT (NORMALIZED)
1.0
1.2
1.0
0.9
0.8
0.6
0.4
–60
0.8
–60
–40
–20
0
20
40
60
80
100
120
140
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Voltage
Figure 7. Typical Holding Current
100
IPK, PEAK CURRENT (AMPS)
10
IPK
10%
tw
1.0
0.1
1.0
tw, PULSE WIDTH (ms)
10
100
Figure 8. Pulse Rating Curve
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610
Microchip MCU
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