S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LSI1012XT1G
S-LSI1012XT1G
SC-89
BENEFITS
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Gate
1
3
Drain
APPLICATIONS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D
Battery Operated Systems
D
Power Supply Converter Circuits
D
Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
Source
2
(Top View)
MARKING DIAGRAM
3
A
1
M
2
Marking
A
A
Shipping
3000/Tape&Reel
10000/Tape&Reel
LSI1012XT1G
S-LSI1012XT1G
LSI1012XT3G
S-LSI1012XT3G
A = Specific Device Code
M = Month Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
Pulsed Drain Current
a
Continuous Source Current (diode conduction)
b
Maximum Power Dissipation
b
for SC 75
SC-75
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
T
J
, T
stg
ESD
P
D
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
5 secs
Steady State
20
"6
Unit
V
600
400
1000
275
175
90
275
160
−55
to 150
2000
500
350
mA
250
150
80
250
140
_C
V
mW
Maximum Power Dissipation
b
for SC 89
SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Rev .O 1/6
LESHAN RADIO COMPANY, LTD.
LSI1012XT1G , S-LSI1012XT1G
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 600 mA
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 500 m A
V
GS
= 1.8 V, I
D
= 350 m A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 10 V, I
D
= 400 mA
I
S
= 150 mA, V
GS
= 0 V
700
0.41
0.53
0.70
1.0
0.8
1.2
0.70
0.85
1.25
S
V
W
0.45
"0.5
0.3
0.9
"1.0
100
5
V
mA
nA
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 47
W
I
D
^
200 mA, V
GEN
= 4.5 V, R
G
= 10
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 250 mA
750
75
225
5
5
25
11
ns
pC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
