MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF20060R/D
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistors
The MRF20060R and MRF20060RS are designed for class AB broadband
commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain, excellent linearity and broadband performance of these devices
make them ideal for large–signal, common emitter class AB amplifier applica-
tions. These devices are suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
•
Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
S–Parameter Characterization at High Bias Levels
•
Excellent Thermal Stability
•
Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
•
Designed for FM, TDMA, CDMA and Multi–Carrier Applications
•
Test Fixtures Available at: http://mot–sps.com/rf/designtds/
Note:
Not suitable for class A operation.
MRF20060R
MRF20060RS
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
ARCHIVE INFORMATION
CASE 451–06, STYLE 1
(MRF20060R)
CASE 451A–03, STYLE 1
(MRF20060RS)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage (I
B
= 0 mA)
Collector–Emitter Voltage
Collector–Base Voltage
Collector–Emitter Voltage (R
BE
= 100 Ohm)
Base–Emitter Voltage
Collector Current – Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
CEO
V
CES
V
CBO
V
CER
V
EB
I
C
P
D
T
stg
T
J
Value
25
60
60
30
–3
8
250
1.43
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.7
Unit
°C/W
REV 3
MOTOROLA RF
Motorola, Inc. 2000
DEVICE DATA
MRF20060R MRF20060RS
1
ARCHIVE INFORMATION
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 50 mAdc, I
E
= 0)
Reverse Base–Emitter Breakdown Voltage
(I
B
= 10 mAdc, I
C
= 0)
Zero Base Voltage Collector Leakage Current
(V
CE
= 30 Vdc, V
BE
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
25
60
60
3
—
28
69
69
3.5
—
—
—
—
—
10
Vdc
Vdc
Vdc
Vdc
mAdc
ARCHIVE INFORMATION
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 5 Vdc, I
C
= 1 Adc)
h
FE
20
40
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 26 Vdc, I
E
= 0, f = 1.0 MHz)
(1)
C
ob
—
55
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Emitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
Output Mismatch Stress
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz, VSWR = 3:1, All Phase
Angles at Frequency of Test)
(1) For Information Only. This Part Is Collector Matched.
G
pe
9
9.8
—
dB
η
33
35
—
%
IMD
—
– 32
– 30
dB
IRL
12
19
—
dB
ψ
No Degradation in Output Power
MRF20060R MRF20060RS
2
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
V
BB
R1
Q2
D1
Q1
C1
+
C3
R2
R3
L4
L2
RF
INPUT
Z1
C2
Z2
C4
Z3
C5
Z4
Z5
Z6
DUT
Z7
C11
Z9
Z10
C13
RF
OUTPUT
L1
C6
L3
C7
C8
C9
C10
C12
R4
C14 C15
B1
+
V
CC
L5
ARCHIVE INFORMATION
B1
C1
C2, C4, C13
C3, C14
C5
C6, C12
C7, C9
C8, C10
C11
C15
Ferrite Bead, P/N 5659065/3B, Ferroxcube
100
µF,
50 V, Electrolytic Capacitor, Mallory
0.6–4.0 pF, Variable Capacitor, Gigatrim, Johanson
0.1
µF,
Chip Capacitor, Kemit
15 pF, B Case Chip Capacitor, ATC
1000 pF, B Case Chip Capacitor, ATC
91 pF, B Case Chip Capacitor, ATC
24 pF, B Case Chip Capacitor, ATC
13 pF, B Case Chip Capacitor, ATC
470
µF,
50 V, Electrolytic Capacitor, Mallory
D1
L1, L5
L2, L4
L3
R1
R2
R3, R4
Q1
Q2
Board
Diode, Motorola (MURS160T3)
12 Turns, 22 AWG, 0.140″ Choke
.5 inch of 20 AWG
12.5 nH Inductor
2 x 130
Ω,
1/8 W Chip Resistor, Rohm
2 x 100
Ω,
1/8 W Chip Resistor, Rohm
10
Ω,
1/2 W, Resistor
Transistor, PNP Motorola (BD136)
Transistor, NPN Motorola (MJD47)
Glass Teflon
, Arlon GX–0300–55–22,
ε
r
Figure 1. 1.93 – 2 GHz Test Fixture Electrical Schematic
MOTOROLA RF DEVICE DATA
MRF20060R MRF20060RS
3
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
70
Pout , OUTPUT POWER (WATTS)
60
50
40
30
20
10
0
0
2
P
out
11.5
11
10.5
10
G
pe
G pe , GAIN (dB)
70
Pout , OUTPUT POWER (WATTS)
60
50
5W
P
in
= 7 W
40
30
20
V
CC
= 26 Vdc
I
CQ
= 200 mA
1850
1900
f, FREQUENCY (MHz)
1950
2000
3W
9.5
9
V
CC
= 26 Vdc
I
CQ
= 200 mA
f = 2000 MHz Single Tone
6
4
P
in
, INPUT POWER (WATTS)
8
8.5
8
10
10
0
1800
ARCHIVE INFORMATION
Figure 2. Output Power & Power Gain
versus Input Power
Figure 3. Output Power versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
- 30
- 40
- 50
- 60
- 70
0
3rd Order
5th Order
7th Order
V
CC
= 26 Vdc
I
CQ
= 200 mA
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
10
30
50
20
40
60
P
out
, OUTPUT POWER (WATTS) PEP
70
80
10
G pe , GAIN (dB)
9.5
9
G
pe
-15
-20
-25
-30
P
out
= 60 W (PEP)
I
CQ
= 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
18
20
IMD
-35
-40
28
8.5
8
7.5
22
24
26
V
CC
, COLLECTOR SUPPLY VOLTAGE (Vdc)
Figure 4. Intermodulation Distortion
versus Output Power
Figure 5. Power Gain and Intermodulation
Distortion versus Supply Voltage
IMD, INTERMODULATION DISTORTION (dBc)
- 20
- 25
- 30
- 35
- 40
- 45
- 50
0.1
400 mA
600 mA
1.0
V
CC
= 26 Vdc
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
10
100
P
out
, OUTPUT POWER (WATTS) PEP
200 mA
I
CQ
= 100 mA
11
I
CQ
= 600 mA
G pe , POWER GAIN (dB)
10
400 mA
9
8
7
6
0.1
200 mA
100 mA
1.0
10
V
CC
= 26 Vdc
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion
versus Output Power
Figure 7. Power Gain versus Output Power
MRF20060R MRF20060RS
4
MOTOROLA RF DEVICE DATA
IMD, INTERMODULATION DISTORTION (dBc)
- 20
10.5
-10
ARCHIVE INFORMATION
10
9.5
G pe , GAIN (dB)
P
out
= 60 W (PEP)
V
CC
= 26 Vdc
I
CQ
= 200 mA
38
G
pe
36
COLLECTOR EFFICIENCY (%)
INPUT VSWR
9
η
34
1.3:1
8.5
VSWR
32
1.2:1
8
1900
1920
1940
1960
f, FREQUENCY MHz)
1980
28
2000
1.1:1
ARCHIVE INFORMATION
1.E+11
MTBF FACTOR (HOURS x AMPS 2 )
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (°C)
250
This above graph displays calculated MTBF in hours x ampere
2
emitter curent. Life tests at elevated temperatures have correlated to
better than
±10%
of the theoretical prediction for metal failure. Divide
MTBF factor by I
C2
for MTBF in a particular application.
Figure 9. MTBF Factor versus
Junction Temperature
MOTOROLA RF DEVICE DATA
MRF20060R MRF20060RS
5
ARCHIVE INFORMATION
Figure 8. Performance in Broadband Circuit
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
