HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2004.08.13
Page No. : 1/4
HMBT1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT1815 is designed for use in driver stage of AF amplifier and general
purpose amplification.
SOT-23
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°C
Junction Temperature.................................................................................................. 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................ 225 mW
•
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ....................................................................................................... 60 V
V
CEO
Collector to Emitter Voltage .................................................................................................... 50 V
V
EBO
Emitter to Base Voltage ............................................................................................................ 5 V
I
C
Collector Current ..................................................................................................................... 150 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
60
50
5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1
700
-
-
3.5
MHz
pF
Unit
V
V
V
nA
nA
mV
V
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CB
=60V
V
EB
=5V
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
V
CE
=10V, I
C
=1mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE1
Rank
Range
C4Y
120-240
C4G
200-400
C4B
350-700
HMBT1815
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000
1000
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2004.08.13
Page No. : 2/4
Saturation Voltage & Collector Current
V
CE(sat)
@ I
C
=10I
B
1000
125 C
o
Saturation Voltage (mV)
hFE
25 C
100
o
100
75 C
o
75 C
o
125 C
o
hFE @ V
CE
=6V
25 C
10
0.1
1
10
100
1000
10
0.1
1
10
100
1000
o
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
V
BE(sat)
@ I
C
=10I
B
10
Capacitance & Reverse-Biased Voltage
Saturation Voltage (mV)
75 C
1000
25 C
o
o
Capacitance (pF)
Cob
125 C
o
100
0.1
1
10
100
1000
1
0.1
1
10
100
Collector Current-I
C
(mA)
Reverse-Biased Voltage (V)
1
1000
Safe Operating Area
Cutoff Frequency & Collector Current
1
Safe Operating Area
PT=1ms
Collector Current-I
C
(mA)
Collector Current-I (mA)
.
Cutoff Frequency
C
(MHz)
..
PT=1ms
PT=100ms
PT=100ms
V
CE
=10V
PT=1s
0.1
100
0.1
PT=1s
0.01
10
1
1
10
10
100
100
0.01
1
10
100
Collector Current (mA)
Forward Voltage-V
CE
(V)
Forward Voltage-V
CE
(V)
HMBT1815
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A
L
Rank Code
(Y,G,B)
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2004.08.13
Page No. : 3/4
C 4
3
Pb Free Mark
B S
1
2
Pb-Free: " "
(Note)
Normal: None
V
G
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT1815
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2004.08.13
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HMBT1815
HSMC Product Specification
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