ACT5101-1 HIGH VOLTAGE 3-PHASE
BRUSHLESS DC MOTOR DRIVE
Features
• 500VDC RATING
• 40 AMP DC RATING
• PACKAGE SIZE 3.0" X 2.1" X 0.39"
• 4 QUADRANT CONTROL
• 6 STEP TRAPEZOIDAL DRIVE CAPABILITY
• MILITARY PROCESSING AVAILABLE
• ISOLATED UPPER AND LOWER GATE DRIVERS
• TEMPERATURE RANGE -55°C TO +125°C
Preliminary
General Description
The ACT5101-1 high voltage 3 phase
brushless DC motor drive combines a
500VDC, 40A high power output stage
along with low power digital input and
gate drive stages. A digital lock-out
feature protects the output stage
from accidental cross-conduction
thus
preventing
shoot-through
conditions. The ACT5101-1 also
includes a floating gate drive design
for each upper and lower transistor.
On-board gate drive supplies provide
a continuous floating voltage for each
upper and lower transistor, even
during a motor stall.
The high power output stage rated
at 500VDC, 40A is capable of
delivering over 20 KW to the load
even
after
derating.
This
is
accomplished through the use of high
power IGBTS with ultra-fast recovery
rectifiers in parallel.
The ACT5101-1 utilizes power hybrid
technology to provide the highest
levels of reliability and lightest weight
while requiring the smallest amount of
board space. The ACT5101-1 is
available with military processing and
operates over the -55 to +125 degrees
C temperature range.
This makes the ACT5101-1 ideal for
all military, space,and commercial
avionics' applications. These incl- ude
electro-hydrostatic actuators [EHA's]
and electro-mechanical actuators
[EMA's] for flight surface control, missile
fin
actuators,
thrust
vector
control, electric brakes, fuel and
cooling
pumps.
Additional
applications include environmental
conditioning
blowers,
radar
positioning, solar panel positioning,
and cryogenic cooler pumps. The
ACT5101-1 is therefore especially
suitable for use in applications for all
military tank upgrades, helicopters,
planes and new commercial avionics
using 270 VDC as the main power.
V
CC
Isolation
V
CC
DC / AC
Converter
SD
Isolation
Phase V+
V
CC
XFMR
&
Rect
Ux
Phase OUT
500V
Optical
Isolation
Isolation
V
CC
XFMR
&
Rect
Lx
Phase RTN
To Other Sections
FIGURE 1 – BLOCK DIAGRAM
eroflex Circuit T
echnology
– Motor Driver Modules For The Future © SCD5101-1 REV G 11/1/02
Table I – Absolute Maximum
( T
C
= -55
°
C to +125
°
C unless otherwise specified )
PARAMETER
Output Supply Voltage (Pins 3,7,11)
Input Supply Voltage (Pin 12)
Output Current (Refer to Figure 2)
Continuous
Pulsed
Junction-Case Thermal Resistance (IGBT) each transistor
Junction-Case Thermal Resistance (DIODE) each Diode
Maximum Lead Soldering Temp
Junction Temperature Range
Case Operating Temperature
Case Storage Temperature Range
Notes:
1/ T
C
= +25°C.
2/ Pulse Width <
TBDµs,
Duty Cycle <
TBD%.
Guaranteed, not tested.
3/ Solder 1/8" from case for 5 seconds maximum.
3/
SYMBOL
V+A, V+B, V+C
V
CC
l
OF
l
OFP
θ
JCIGBT
θ
JCDIODE
RANGE
500 Max
1/
UNITS
V DC
V DC
A
A
°
C/W
°
C/W
°
C
°
C
°
C
°
C
+18 Max
40 Max
1/
60 Max
2/
.45 Max
.85 Max
250 Max
-55 to 150
-55 to 125
-55 to 150
T
S
T
J
T
C
T
CS
Table II – Normal Operating Conditions
T
C
= +25
°
C unless otherwise specified
PARAMETERS
INPUT STAGE
Input Supply Current
Input Supply Voltage
Input Voltage Low
Input Voltage High
Input Current Low
POWER OUTPUT STAGE
Output Current Continuous
(Refer to Figure 2)
Output Supply Voltage
Output Voltage Drop
(each IGBT)
NOTE: V
DROP
F
= Vphase V
+
- Vphase Out
or
V
DROPP
F
= Vphase Out - Vphase RTN
5/
SYMBOL
TEST
MIN
CONDITIONS
TYP
MAX
UNIT
l
S
V
CC
V
INL
V
INH
I
INH
Vcc = +15V
-
NOTE:
Internally pulled
up to
Vcc = +15V
-
14.25
-
6.8
-
TBD
15
-
-
-
TBD
15.75
4
-
3.75
mA
V DC
V DC
V DC
mA
l
OF
V+ A,V+ B,V+ C
V
DROP
F
5/
V
DROP
F
-
-
l
OF
= 40A
l
OF
=
TBDA
-
15
-
-
-
270
TBD
TBD
40
500
TBD
TBD
A
V DC
V DC
V DC
Instantaneous Forward Voltage
(flyback diode)
NOTE: V
DROP
R
= Vphase Out - Vphase V
+
or
V
DROP
R
= Vphase RTN - Vphase Out
V
DROP
R
1/ 5/
V
DROP
R
1/
5/
2
l
OR
= 40A
l
OR
=
TBDA
-
-
-
-
TBD
TBD
-
TBD
TBD
35
V DC
V DC
nsec
Reverse Recovery Time (flyback diode)
Aeroflex Circuit Technology
t
RR
SCD5101-1 REV G 11/1/02 Plainview NY (516) 694-6700
Table II – Normal Operating Conditions
(Continued)
T
C
= +25
°
C unless otherwise specified
PARAMETERS
Reverse Leakage Current (V
IN
High)
Tc = 25
°
C
Tc = 125
°
C
2/ 5/ 6/
ISOLATION CHARACTERISTICS
Isolation Voltage
5/
4/
SYMBOL
TEST
MIN
CONDITIONS
V+ = 500V
V+ = 480V
-
-
TYP
MAX
UNIT
l
R25
l
R125
-
-
1.0
8.0
mA
mA
V
ISO
-
500
-
-
V
SWITCHING CHARACTERISTICS
Upper Drive
(See Figure 5 – Timing Diagram)
:
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Turn-on Transition Time
Turn-off Transition Time
Lower Drive
(See Figure 5 – Timing Diagram)
:
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Turn-on Transition Time
Turn-off Transition Time
SWITCHING ENERGY LOSSES (At I
OF
= 40A, V = 270V)
Turn-on Energy
Turn-off Energy
DEAD TIME
5/
4/
t
d
(on)
t
d
(off)
t
SDU
t
r
t
f
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
700
2
3.5
100
250
nsec
µsec
µsec
nsec
nsec
t
d
(on)
t
d
(off)
t
SDL
t
r
t
f
-
-
-
-
-
T
C
= +25
°
C
-
-
-
-
-
-
-
-
-
-
600
2
3.5
250
200
nsec
µsec
µsec
nsec
nsec
E
on
E
off
-
-
TBD
TBD
-
TBD
TBD
-
mJ
mJ
nsec
t
dt
-
500
Notes:
1/ Pulse width
≤
300 usec duty cycle
≤2%.
2/ Pulse width
≤
TBD
usec duty cycle
≤TBD
4/ Tested @ 6.5Amps.
5/ Guaranted, not tested.
6/ Not to exceed T
J
of +150°C. Reference page 11 – Mechanical Applications for Case Interface Temperature.
Aeroflex Circuit Technology
3
SCD5101-1 REV G 11/1/02 Plainview NY (516) 694-6700
DIGITAL INPUT STAGE
The ACT5101-1 offers complete flexibility by allowing the user to turn on/off each of the 6 IGBTS in any order
or combination desired which enables the hybrid to be commutated in a 6 step trapezoidal mode. The only
unacceptable combination would be to turn on an upper and lower transistor of the same phase. This is not
a desirable condition for normal operation and is therefore not allowed. The ACT5101-1 has a digital lockout
feature that prevents turn-on of two in-line transistors. Damage to one or both of the transistors would occur
if this protection circuitry was not present in the hybrid. As a safety precaution, it is still recommended that a
500 nsec dead time be installed between commands at the inputs of the upper and lower transistors of the
same phase. This will compensate for any lag in transistor turn-off due to the inductive load.
The SD input allows the user to enable/disable the drive stage of the ACT5101-1 on demand. This input can
be incorporated into the user's temperature or current monitoring circuitry to shutdown the hybrid if
excessive current or case temperatures are sensed.
The digital input circuits are of the Schmitt trigger type with hystersesis of at least 1.6 volts, thus greatly
enhancing the input noise immunity. The inputs are internally pulled up to 15 volts so that an uncommitted
input is sensed as "OFF", providing a measure of protection against an accidental input disconnect.
GATE DRIVE
The ACT5101-1 includes a gate drive supply which provides a floating voltage for each upper and lower
transistor. This constant voltage allows the motor to be operated at very low duty cycles or driven into a stall
without any loss of upper or lower gate drive. This performance could not be obtained with only a
conventional boot strap design.
POWER OUTPUT STAGE
IGBTS [insulated gate bipolar transistors] are technically similar to bipolars and MOSFETS. An IGBT is a
composite of a transistor with an N-channel MOSFET connected to the base of a PNP transistor. Like the
MOSFET, it offers high input impedance and requires low input drive current. IGBT conduction losses are low, as
with bipolar technology, and IGBT voltage drops are much lower compared with those of MOSFETs.
Consequently, the IGBT offers a high current density. With a smaller die size than the MOSFET, it can handle the
same current rating. Unlike MOSFETS, IGBTS have no intrinsic body diode. The ACT5101-1 includes 35 nsec fast
recovery rectifiers in parallel across each of the 6 IGBTS to carry the reverse current when the IGBT is turned off.
It is important for the user to observe the Absolute Maximum ratings of the ACT5101-1 so that the voltage and
current rating is not exceeded. If over-voltage/over-current protection is desired it must be implemented
external to the ACT5101-1. Figure 2 shows the ACT5101-1 output current capability vs. case temperature.
45
Output Current I
O
(A)
40
35
30
25
20
15
10
0
20 40 60 80 100 120 140
Case Temperature T
C
(°C)
FIGURE 2 - OUTPUT CURRENT VS. CASE TEMPERATURE
Aeroflex Circuit Technology
4
SCD5101-1 REV G 11/1/02 Plainview NY (516) 694-6700
POWER DISSIPATION
Power dissipation in the ACT5101-1 is composed of three elements: IGBT conduction losses, IGBT switching
losses, and commutation diode conduction losses. It is important that the user calculates power dissipations
over the full range of operating conditions of the hybrid, and uses these dissipations to compute the worst
case junction temperatures both for the IGBTs and diodes. The 150
°
C maximum junction temperature shown
in Table 1 must not be exceeded. Additionally, program specific derating and reliability constraints may
require lower junction temperatures than the 150
°
C maximum.
Calculating IGBT conduction losses requires the user to determine load profiles for the hybrid both in
current and time duration. IGBT voltage drops are shown in Figure 3.
2.8
2.6
2.4
T
J
= 150
°
C
V
DROP
F
(V)
2.0
1.8
1.6
1.4
1.2
1.0
10
20
30
40
50
60
2.2
T
J
= 25
°
C
70
80
I
OF
(A)
FIGURE 3 - IGBT V
DROPF
VOLTAGE VS. I
OF
COLLECTOR CURRENT
Based upon this voltage drop and the conduction duty cycle a conduction power loss may be calculated
as:
P
c
=
δ
S
⋅ δ
PWM
⋅
V
DROP
⋅
I
OF
F
where:
p
c
=
δ
s
=
δ
PWM
=
Conduction IGBT Power Dissipation
Switch Duty Cycle, (.33 for brushless drives in run condition, 1 in stall)
PWM on/off ratio
V
DROP
voltage from Figure 3 for a particular collector current
Collector current
V
DROP
F
=
I
OF
=
Switching losses are dependent upon the operating frequency, collector current and again duty cycle as:
I
OF
-
P
s
=
δ
S
⋅ [
E
on
+
E
off
] ⋅
f
o
⋅
-------
40
where:
P
s
=
E
on
=
E
off
=
f
o
=
I
OF
=
Switching IGBT Power Dissipation
Turn on energy loss from Table 2
Turn off energy loss from Table 2
Pulse width modulation frequency
Collector current
Aeroflex Circuit Technology
5
SCD5101-1 REV G 11/1/02 Plainview NY (516) 694-6700
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
