BL
FEATURES
G
ZENER DIODES
BZV55 ---SERIES
POWER DISSIPATION: 500 mW
Silicon planar power zener diodes
The zener voltages are graded according to the
international E 24 standard. Standard zener voltage
tolerance is ±5%. Replace suffix "C" with "B" for ±2%,
other voltage tolerance and other zener voltage are
available upon request.
MINI-MELF
Cathode indification
0.1
3.4
+0.3
-0.1
0.4
1 .5
0.1
MECHANICAL DATA
Case:MINI-MELF,glass case
Terminals: Solderable per MIL-STD-202, method 208
Polarity: Cathode band
Marking: Type number
Approx. Weight: 0.031 grams.
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
Pow er dissipation @ T
amb
=50
Junction temperature
Storage temperature range
VALUE
UNIT
P
tot
T
J
T
s
500
1)
200
-65---+200
mW
SYMBOL
Thermal resistance junction to ambient
Forw ard voltage at I
F
=10mA
NOTES: (1) Device mounted on a ceramic substrate of 10X10X0.6mm.
MIN
TYP
MAX
380
1)
0.9
UNIT
K/W
V
www.gmesemi.com
R
θ
JA
V
F
Document Number BZV55
BL
GALAXY ELECTRICAL
1.
ELECTRICAL CHARACTERISTICS
(Ratings at 25
Working voltage
V
Z
at I
ztest
=5mA
BZV55-
BXXX
CXXX
Tol.±2%(B) Tol.±5%(C)
Dynamic resistance
rzj( )
at
I
ztest
=1mA
at
I
ztest
=5mA
ambient temperature unless otherwise specified)
TABLE1
Temp.coefficient
of zener voltage
at I
Z
=5mA
S
z
(mV/K)
Maximum Non-repetitive
Maximum
capacitance peak reverse
reverse leakage
V
R
=0V
current
current
at T
P
=100 s
f=1MH
Z
I
R
(n A)
50000
20000
10000
5000
5000
3000
3000
3000
2000
1000
3000
2000
1000
700
500
200
100
100
100
50
50
50
50
50
50
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
2.45
2.75
3.1
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
70
75
80
85
85
85
80
50
40
15
6.0
6.0
6.0
6.0
6.0
8.0
10
10
10
10
10
10
15
20
25
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
12.3
14.1
15.9
-1.6
-2
-2.1
-2.4
-2.4
-2.5
-2.5
-1.4
-0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
15.6
17.6
19.6
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10
11
13
14
16
18
20
22
at V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
11
12
14
15
17
18
Cd
(p F)
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
I
ZSM
(A)
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
www.gmesemi.com
Document Number BZV55
BL
GALAXY ELECTRICAL
2.
ELECTRICAL CHARACTERISTICS
(Ratings at 25
Working voltage
V
Z
at I
ztest
=2mA
BZV55-
BXXX
CXXX
Tol.±2%(B) Tol.±5%(C)
Dynamic resistance
rzj( )
at
at
I
ztest
=0.5mA I
ztest
=2mA
ambient temperature unless otherwise specified)
TABLE2
Temp.coefficient
of zener voltage
at I
Z
=2mA
S
z
(mV/K)
Maximum Non-repetitive
Maximum
capacitance peak reverse
reverse leakage
V
R
=0V
current
current
at T
P
=100 s
f=1MH
Z
I
R
(n A)
50
50
50
50
50
50
50
50
50
50
50
50
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
25.1
28
31
34
37
40
44
48
52
58
64
70
28.9
32
35
38
41
46
50
54
60
66
72
79
65
70
75
80
80
85
85
90
100
120
150
170
300
300
325
350
350
375
375
400
425
450
475
500
25
30
35
35
40
45
50
60
70
80
90
95
80
80
80
90
130
150
170
180
200
215
240
255
18
20.6
23.3
26
28.7
31.4
35
38.6
42.2
58.8
65.6
73.4
22.7
25.7
28.7
31.8
34.8
38.8
42.9
46.9
52
64.4
71.7
80.2
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
at V
R
(V)
20
22
24
27
28
32
35
38
39
43
48
53
Cd
(p F)
50
50
45
45
45
40
40
40
40
35
35
35
I
ZSM
(A)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
www.gmesemi.com
Document Number BZV55
BL
GALAXY ELECTRICAL
3.
RATINGSANDCHARACTERISTICCURVES
BZV55 --- SERIES
FIG.1 -- THERMAL RESISTANCE FROM JUNCTION TO AMBIENT AS A FUNCTION OF PULSE DURATION.
10
3
handbook, full pagewidth
Rth j-a
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
2
10
0.02
0.01
≤0.001
tp
T
tp
T
δ
=
1
10
−1
1
10
10
2
10
3
10
4
tp (ms)
10
5
FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
mW
500
400
P
tot
300
200
100
0
0
100
T
amb
200
www.gmesemi.com
Document Number BZV55
BL
GALAXY ELECTRICAL
4.
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
