MAXIMUM RATINGS
REPETITIVE PEAK OFF-STATE VOLTAGE (1)
GATE OPEN, AND TJ = 110° C
RMS ON-STATE CURRENT AT TC = 80º C AND
CONDUCTION, ANGLE OF 360º
PEAK SURGE (NON-REPETITIVE) ON-STATE
CURRENT, ONE-CYCLE, AT 50HZ OR 60HZ
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
PEAK GATE – POWER DISSIPATION AT IGT < IGTM
AVERAGE GATE - POWER DISSIPATION
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE, TJ
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PEAK OFF - STATE CURRENT (1) GATE OPEN
TC = 110° C VDRM = MAX. RATING
MAXIMUM ON - STATE VOLTAGE, (1)
AT TC = 25° C AND IT = RATED AMPS
DC HOLDING CURRENT, (1) GATE
OPEN AND TC = 25° C
CRITICAL RATE-OF-RISE OF OFF-
STATE VOLTAGE, (1) FOR VD =
VDRM GATE OPEN, TC = 110° C
CRITICAL RATE-OF-RISE OF
COMMUTATION VOLTAGE, (1) AT
TC = 80° C, GATE UNENERGIZED,
VD = VDRM, IT = IT (RMS)
DC GATE - TRIGGER CURRENT FOR
VD = 12VDC. RL = 30
Ω
AND AT TC = 25° C
(T2 + GATE + T2 - GATE-) Q 1 & 3
(T2 + GATE - T2 - GATE +) Q 2 & 4
DC GATE - TRIGGER VOLTAGE FOR
VD = 12VDC. RL = 30
Ω
AND AT TC = 25° C
GATE CONTROLLED TURN-ON TIME
FOR VD = VDRM IGT = 200MA, TR = 0.1 µSEC.
IT = 10A (PEAK) AND TC = 25° C
THERMAL RESISTANCE, JUNCTION-TO-CASE
PRESS-FIT
STUD
ISOLATED STUD
SYMBOL VDRM
VDRM
IT(RMS)
ITSM
IGTM
PGM
PG(AV)
TSTG
TOPER
200
400
600
*T215
*T415
*T615
15
150
4
40
0.8
DEVICE NUMBERS
*T225
*T425
*T625
25
250
*T230
*T430
*T630
30
300
*T240
*T440
*T640
40
400
12
40
0.75
UNITS
VOLT
AMP
AMP
AMP
WATT
WATT
°C
°C
4
12
40
40
0.8
0.75
-40 to +150
-40 to +110
IDRM
VTM
IHO
CRITICAL
dv/dt
COMMUTATING
1.0
2.2
60
100
1.0
2.5
60
100
1.0
2.0
60
200
1.0
2.0
60
200
MA
MAX.
VOLT
MAX.
MA
MAX.
V/µSEC.
dv/dt
3
3
3
3
V/µSEC.
IGT
(2)
100 I, III 100 I, III 100 I, III
150 II, IV 150 II, IV 150 II, IV
2.5
2.5
2.5
100 I, III
150 II, IV
2.5
MA
MAX.
VOLT
MAX.
µSEC.
VGT
TGT
3
3
3
3
R0J-C
1.8
1.8
2.1
1.8
1.8
2.1
1.8
1.8
2.1
1.8
1.8
2.1
°C / WATT
TYP
Notes:
(1) All values apply in either direction.
(2) Other gate options available; Consult factory.
P
SP
SIP
PRESS FIT
PRESS FIT WITH STUD MOUNT
WARNING
Isolated stud products should be handled with care. The ceramic used
in these thyristors contains BERYLLIUM OXIDE as a major ingredient.
DO NOT crush, grind or abrade these portions of the thyristors because
the dust resulting from such action may be HARZARDOUS if INHALED.
PRESS FIT WITH ISOLATED STUD
MOUNT
*Add prefix for package style desired.
SOLID STATE CONTROL DEVICES
25
嵌入式系统
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