RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
| 参数名称 | 属性值 |
| Reach Compliance Code | unknown |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 65 V |
| 最大漏极电流 (ID) | 0.9 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | O-CRPM-F4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND |
| 封装形式 | POST/STUD MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 17.5 W |
| 最小功率增益 (Gp) | 11 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | FLAT |
| 端子位置 | RADIAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| MRF161 | MRF137 | MRF162 | MRF163 | MRF171 | |
|---|---|---|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 65 V | 65 V | 65 V | 65 V | 65 V |
| 最大漏极电流 (ID) | 0.9 A | 5 A | 2.5 A | 5 A | 4.5 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JESD-30 代码 | O-CRPM-F4 | O-CRFM-F4 | O-CRPM-F4 | O-CRPM-F4 | O-CRFM-F4 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 | 4 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | POST/STUD MOUNT | FLANGE MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 17.5 W | 100 W | 50 W | 87.5 W | 115 W |
| 最小功率增益 (Gp) | 11 dB | 13 dB | 11 dB | 10 dB | 12 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | RADIAL | RADIAL | RADIAL | RADIAL | RADIAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | - | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| 包装说明 | - | FLANGE MOUNT, O-CRFM-F4 | - | POST/STUD MOUNT, O-CRPM-F4 | FLANGE MOUNT, O-CRFM-F4 |
| 最大漏极电流 (Abs) (ID) | - | 5 A | 2.5 A | 5 A | 4.5 A |
| 最大功率耗散 (Abs) | - | - | 50 W | 87.5 W | 115 W |
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