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MRF891S

产品描述UHF BAND, Si, NPN, RF POWER TRANSISTOR
产品类别分立半导体    晶体管   
文件大小146KB,共4页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MRF891S概述

UHF BAND, Si, NPN, RF POWER TRANSISTOR

MRF891S规格参数

参数名称属性值
包装说明MICROWAVE, R-CDMW-F6
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)0.6 A
基于收集器的最大容量8 pF
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)30
最高频带ULTRA HIGH FREQUENCY BAND
JESD-30 代码R-CDMW-F6
元件数量1
端子数量6
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式MICROWAVE
极性/信道类型NPN
功耗环境最大值18 W
最小功率增益 (Gp)9 dB
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF891/D
. . . designed for 24 volt UHF large–signal, common–emitter amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
800 – 960 MHz.
Specified 24 Volt, 900 MHz Characteristics
Output Power = 5.0 Watts
Power Gain = 9.0 dB Min
Efficiency = 50% Min
Series Equivalent Large–Signal Characterization
Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output
Power and Supply Voltage
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 50°C (1)
Derate above 50°C
Storage Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Value
30
55
4.0
0.6
18
0.143
– 65 to +150
Unit
Vdc
Vdc
5.0 W, 900 MHz
RF POWER
TRANSISTORS
NPN SILICON
LIFETIME BUY
CASE 319–07, STYLE 2
MRF891
Adc
Watts
W/°C
°C
CASE 319A–02, STYLE 2
MRF891S
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
θJC
Max
7.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.5 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
30
55
4.0
1.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
30
150
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF891 MRF891S
2–1
LAST ORDER 24/03/00
Vdc
LAST SHIP 24/09/00
NPN Silicon
RF Power Transistors
MRF891
MRF891S

 
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