TZQ5221B...TZQ5267B
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Available with tighter tolerances
Very high stability
Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction lead
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJL
R
thJA
Value
300
500
Unit
K/W
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
TELEFUNKEN Semiconductors
Rev. A2, 22-Aug-97
1 (7)
TZQ5221B...TZQ5267B
Type
TZQ5221B
TZQ5222B
TZQ5223B
TZQ5224B
TZQ5225B
TZQ5226B
TZQ5227B
TZQ5228B
TZQ5229B
TZQ5230B
TZQ5231B
TZQ5232B
TZQ5233B
TZQ5234B
TZQ5235B
TZQ5236B
TZQ5237B
TZQ5238B
TZQ5239B
TZQ5240B
TZQ5241B
TZQ5242B
TZQ5243B
TZQ5244B
TZQ5245B
TZQ5246B
TZQ5247B
TZQ5248B
TZQ5249B
TZQ5250B
TZQ5251B
TZQ5252B
TZQ5253B
TZQ5254B
TZQ5255B
V
Znom 1)
V
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
I
ZT
for r
zjT
mA
W
20
< 30
20
< 30
20
< 30
20
< 30
20
< 29
20
< 28
20
< 24
20
< 23
20
< 22
20
< 19
20
< 17
20
< 11
20
<7
20
<7
20
<5
20
<6
20
<8
20
<8
20
< 10
20
< 17
20
< 22
20
< 30
9.5
< 13
9.0
< 15
8.5
< 16
7.8
< 17
7.4
< 19
7.0
< 21
6.6
< 23
6.2
< 25
5.6
< 29
5.2
< 33
5.0
< 35
4.6
< 41
4.5
< 44
r
zjk
at I
ZK
W
mA
< 1200 0.25
< 1250 0.25
< 1300 0.25
< 1400 0.25
< 1600 0.25
< 1600 0.25
< 1700 0.25
< 1900 0.25
< 2000 0.25
< 1900 0.25
< 1600 0.25
< 1600 0.25
< 1600 0.25
< 1000 0.25
< 750 0.25
< 500 0.25
< 500 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
< 600 0.25
I
R
at
m
A
< 100
< 100
< 75
< 75
< 50
< 25
< 15
< 10
<5
<5
<5
<5
<5
<5
<3
<3
<3
<3
<3
<3
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
TK
VZ
%/K
< –0.085
< –0.085
< –0.080
< –0.080
< –0.075
< –0.070
< –0.065
< –0.060
<
±0.055
<
±0.030
<
±0.030
< +0.038
< +0.038
< +0.045
< +0.050
< +0.058
< +0.062
< +0.065
< +0.068
< +0.075
< +0.076
< +0.077
< +0.079
< +0.082
< +0.082
< +0.083
< +0.084
< +0.085
< +0.086
< +0.086
< +0.087
< +0.088
< +0.089
< +0.090
< +0.091
2 (7)
TELEFUNKEN Semiconductors
Rev. A2, 22-Aug-97
TZQ5221B...TZQ5267B
Type
TZQ5256B
TZQ5257B
TZQ5258B
TZQ5259B
TZQ5260B
TZQ5261B
TZQ5262B
TZQ5263B
TZQ5264B
TZQ5265B
TZQ5266B
TZQ5267B
1)
V
Znom 1)
V
30
33
36
39
43
47
51
56
60
62
68
75
I
ZT
for r
zjT
mA
W
4.2
< 49
3.8
< 58
3.4
< 70
3.2
< 80
3.0
< 93
2.7 < 105
2.5 < 125
2.2 < 150
2.1 < 170
2.0 < 185
1.8 < 230
1.7 < 270
r
zjk
at I
ZK
W
mA
< 600 0.25
< 700 0.25
< 700 0.25
< 800 0.25
< 900 0.25
< 1000 0.25
< 1100 0.25
< 1300 0.25
< 1400 0.25
< 1400 0.25
< 1600 0.25
< 1700 0.25
I
R
at V
R
m
A
V
< 0.1
23
< 0.1
25
< 0.1
27
< 0.1
30
< 0.1
33
< 0.1
36
< 0.1
39
< 0.1
43
< 0.1
46
< 0.1
47
< 0.1
52
< 0.1
56
TK
VZ
%/K
< +0.091
< +0.092
< +0.093
< +0.094
< +0.095
< +0.095
< +0.096
< +0.096
< +0.097
< +0.097
< +0.097
< +0.098
Based on dc measurement at thermal equilibrium;
case temperature maintained at 30°C
±
2°C.
TELEFUNKEN Semiconductors
Rev. A2, 22-Aug-97
3 (7)
TZQ5221B...TZQ5267B
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
15
10
5
I
Z
=5mA
0
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
95 9600
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
– Voltage Change ( mV )
T
j
= 25°C
100
150
V
R
= 2V
100
T
j
= 25°C
I
Z
=5mA
10
D
V
Z
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25
°
C
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
I
F
– Forward Current ( mA )
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
Figure 5. Diode Capacitance vs. Z–Voltage
100
10
T
j
= 25°C
1
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
0.1
0.01
0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
95 9599
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
Figure 6. Forward Current vs. Forward Voltage
4 (7)
TELEFUNKEN Semiconductors
Rev. A2, 22-Aug-97
TZQ5221B...TZQ5267B
100
r
Z
– Differential Z-Resistance (
W
)
1000
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
I
Z
– Z-Current ( mA )
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
95 9604
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
50
P
tot
=500mW
T
amb
=25°C
Figure 9. Differential Z–Resistance vs. Z–Voltage
I
Z
– Z-Current ( mA )
40
30
20
10
0
15
20
25
30
35
95 9607
V
Z
– Z-Voltage ( V )
Figure 8. Z–Current vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
t
p
/T=0.01
D
T=T
jmax
–T
amb
R
thJA
=300K/W
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 10. Thermal Response
Figure 11. Board for R
thJA
definition (in mm)
TELEFUNKEN Semiconductors
Rev. A2, 22-Aug-97
5 (7)
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
