DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFX85
NPN switching transistor
Product specification
Supersedes data of Sepember 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 60 V).
APPLICATIONS
•
General purpose switching and amplification
•
Industrial applications.
1
handbook, halfpage
BFX85
PINNING
PIN
1
2
3
emitter
base
collector, connected to case
DESCRIPTION
DESCRIPTION
NPN transistor in a TO-39 metal package.
3
2
2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
t
off
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
T
amb
≤
25
°C
T
case
≤
100
°C
I
C
= 150 mA; V
CE
= 10 V
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
open emitter
open base
CONDITIONS
MIN.
−
−
−
−
−
70
50
TYP.
−
−
−
−
−
142
−
360
MAX.
100
60
1
800
2.86
−
−
−
MHz
ns
UNIT
V
V
A
mW
W
I
Con
= 150 mA; I
Bon
= 15 mA; I
Boff
=
−15
mA
−
1997 Apr 22
2
Philips Semiconductors
Product specification
NPN switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
T
case
≤
25
°C
25° C
≤
T
case
≤
100
°C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
100
60
6
1
1
100
800
5
2.86
+150
175
+150
BFX85
UNIT
V
V
V
A
A
mA
mW
W
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
thermal resistance from junction to case
CONDITIONS
VALUE
200
35
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air
1997 Apr 22
3
Philips Semiconductors
Product specification
NPN switching transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
CONDITIONS
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°C
I
E
= 0; V
CB
= 100 V
I
E
= 0; V
CB
= 100 V; T
j
= 100
°C
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
C
= 0; V
EB
= 5 V; T
j
= 100
°C
I
C
= 0; V
EB
= 6 V
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
C
c
f
T
t
on
t
d
t
r
t
off
t
s
t
f
collector capacitance
transition frequency
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA
MIN.
−
−
−
−
−
−
−
50
70
30
15
−
−
−
−
−
−
−
−
−
50
−
−
−
−
−
−
TYP.
2
0.1
10
0.5
2
0.1
10
90
142
90
50
150
150
0.35
0.66
0.69
0.92
1.15
1.4
7
185
BFX85
MAX. UNIT
50
2.5
500
30
50
2.5
500
−
−
−
−
200
350
1
1.6
1.2
1.3
1.5
2
12
−
−
−
−
−
−
−
mV
mV
V
V
V
V
V
V
pF
MHz
nA
µA
nA
µA
nA
µA
nA
Switching Times (between 10% and 90% levels)
see Fig.2
turn-on time
delay time
rise time
turn-off time
storage time
fall time
55
15
40
360
300
60
ns
ns
ns
ns
ns
ns
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN switching transistor
BFX85
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 9.5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
=
−3.5
V; V
CC
= 29.5 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1997 Apr 22
5
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