High-reliability discrete products
and engineering services since 1977
FEATURES
BRX44-BRX49
SILICON CONTROLLED RECTIFIER
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Characteristics
Peak repetitive forward and reverse blocking voltage
(T
J
= 25 to 125°C, R
GK
= 1000Ω)
BRX44
BRX45
BRX46
BRX47
BRX49
Forward current RMS
(all conduction angles)
Peak forward surge current
(T
A
= 25°C, ½ cycle, sine wave, 60Hz)
Circuit fusing considerations
(T
A
= 25°C, t = 8.3ms)
Forward peak gate power
(T
A
= 25°C)
Forward peak gate current
(T
A
= 25°C)
(300µs, 120 PPS)
Peak reverse gate voltage
Operating junction temperature range @ rated V
RRM
and V
DRM
Storage temperature range
Lead solder temperature
(<1.5mm from case, 10 sec. max.)
Thermal Resistance, junction to case
Thermal Resistance, junction to ambient
R
θJC
R
θJA
(1)
Symbol
Value
Units
V
DRM
, V
RRM
30
60
100
200
400
0.8
8
0.15
0.1
1
5
-40 to +125
-40 to +150
+230
75
200
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
I
GM
V
GRM
T
J
T
stg
Amps
Amps
A
2
s
Watt
Amps
Volts
°C
°C
°C
°C/W
°C/W
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ELECTRICAL CHARACTERISTICS
(T
C
25°C, R
GK
= 1000Ω unless otherwise noted)
Characteristic
Peak forward blocking current
(V
D
= rated V
DRM
@ T
C
= 125°C)
Peak reverse blocking current
(V
R
= rated V
RRM
@ T
C
= 125°C)
Forward “on” voltage
(2)
(I
TM
= 1A peak @ T
A
= 25°C)
Gate trigger current
(continuous dc)
(3)
(Anode voltage = 7V, R
L
= 100Ω, T
C
= 25°C)
Symbol
I
DRM
I
RRM
V
TM
I
GT
Min
-
-
-
-
Max
100
100
1.7
200
Units
µA
µA
Volts
µA
.
Rev. 20130128
High-reliability discrete products
and engineering services since 1977
BRX44-BRX49
Symbol
V
GT
Min
SILICON CONTROLLED RECTIFIER
Max
Units
Volts
ELECTRICAL CHARACTERISTICS
(T
C
25°C, R
GK
= 1000Ω unless otherwise noted)
Characteristic
Gate trigger voltage
(continuous dc)
(Anode voltage = 7V, R
L
= 100Ω)
(Anode voltage = rated V
DRM
, R
L
= 100Ω)
T
C
= 25°C
T
C
= -40°C
T
C
= 125°C
Holding current
(Anode voltage = 7V, initiating current = 20mA)
T
C
= 25°C
T
C
= -40°C
Note 2: Forward current applied for 1 ms maximum duration, duty cycle ≤ 1%.
Note 3: R
GK
current is not included in measurement.
-
-
0.1
I
H
-
-
0.8
1.2
-
mA
5
10
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-92
Body painted, alpha-numeric
See below
Rev. 20130128
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